发明申请
US20130052779A1 FABRICATION OF A SEMICONDUCTOR DEVICE WITH EXTENDED EPITAXIAL SEMICONDUCTOR REGIONS
有权
具有扩展的外延半导体区域的半导体器件的制造
- 专利标题： FABRICATION OF A SEMICONDUCTOR DEVICE WITH EXTENDED EPITAXIAL SEMICONDUCTOR REGIONS
- 专利标题（中）： 具有扩展的外延半导体区域的半导体器件的制造
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申请号： US13219331申请日： 2011-08-26
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公开(公告)号： US20130052779A1公开(公告)日： 2013-02-28
- 发明人: Stefan Flachowsky , Frank Wirbeleit , Matthias Kessler , Ricardo P. Mikalo
- 申请人： Stefan Flachowsky , Frank Wirbeleit , Matthias Kessler , Ricardo P. Mikalo
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A method of fabricating a semiconductor device structure begins by forming a layer of oxide material overlying a first gate structure having a first silicon nitride cap and overlying a second gate structure having a second silicon nitride cap. The first gate structure corresponds to a p-type transistor to be fabricated, and the second gate structure corresponds to an n-type transistor to be fabricated. The method continues by performing a tilted ion implantation procedure to implant ions of an impurity species in a channel region of semiconductor material underlying the first gate structure, during which an ion implantation mask protects the second gate structure. Thereafter, the ion implantation mask and the layer of oxide material are removed, and regions of epitaxial semiconductor material are formed corresponding to source and drain regions for the first gate structure. Thereafter, the first silicon nitride cap and the second silicon nitride cap are removed.
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