发明申请
US20130052826A1 High Aspect Ratio Grid for Phase Contrast X-ray Imaging and Method of Making the Same
审中-公开
相对对比X射线成像的高宽比网格及其制作方法
- 专利标题: High Aspect Ratio Grid for Phase Contrast X-ray Imaging and Method of Making the Same
- 专利标题(中): 相对对比X射线成像的高宽比网格及其制作方法
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申请号: US13221702申请日: 2011-08-30
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公开(公告)号: US20130052826A1公开(公告)日: 2013-02-28
- 发明人: Mark Nepomnishy , Shinya Sugimoto , Yasuhisa Kaneko
- 申请人: Mark Nepomnishy , Shinya Sugimoto , Yasuhisa Kaneko
- 申请人地址: JP Tokyo
- 专利权人: FUJIFILM CORPORATION
- 当前专利权人: FUJIFILM CORPORATION
- 当前专利权人地址: JP Tokyo
- 主分类号: H01L21/311
- IPC分类号: H01L21/311
摘要:
Semiconductor substrates with high aspect ratio recesses formed therein are described. The high aspect ratio recesses have bottom surface profile characteristics that promote formation of initial growth sites of plated metal as compared to the side surfaces of the recesses. Processes for making and plating the recesses are also disclosed. The metal-plated high aspect ratio recesses can be used as X-ray gratings in Phase Contrast X-ray imaging apparatuses.