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公开(公告)号:US20130286097A1
公开(公告)日:2013-10-31
申请号:US13460503
申请日:2012-04-30
Applicant: Gregory De Brabander , Mark Nepomnishy , John A. Higginson
Inventor: Gregory De Brabander , Mark Nepomnishy , John A. Higginson
CPC classification number: B41J2/1433 , B41J2/14233 , B41J2/162 , B41J2/1628 , B41J2/1631 , B41J2002/14475 , B41J2202/11
Abstract: Techniques are provided for making a funnel-shaped nozzle in a semiconductor substrate. The funnel-shaped recess includes a straight-walled bottom portion and a curved top portion having a curved sidewall gradually converging toward and smoothly joined to the straight-walled bottom portion, and the curved top portion encloses a volume that is substantially greater than a volume enclosed by the straight-walled bottom portion.
Abstract translation: 提供了在半导体衬底中制作漏斗形喷嘴的技术。 漏斗状凹部包括直壁的底部部分和弯曲的顶部部分,该弯曲的顶部部分具有朝向并顺利地连接到直壁底部的弯曲侧壁,并且弯曲的顶部部分包围大体积大于体积的体积 由直壁底部包围。
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公开(公告)号:US20130264911A1
公开(公告)日:2013-10-10
申请号:US13892489
申请日:2013-05-13
Applicant: Gregory De Brabander , Mark Nepomnishy
Inventor: Gregory De Brabander , Mark Nepomnishy
IPC: H01L41/053 , H01L29/06
CPC classification number: H01L41/053 , B41J2/14209 , B41J2/14233 , B41J2/1609 , B41J2/161 , B41J2/1629 , B41J2/1632 , B41J2/1642 , B41J2/1646 , B41J2002/14266 , H01L29/06 , H01L41/098 , H01L41/331
Abstract: Processes for making a membrane having a curved feature are disclosed. Recesses each in the shape of a reversed, truncated pyramid are formed in a planar substrate surface by KOH etching through a mask. An oxide layer is formed over the substrate surface. The oxide layer can be stripped leaving rounded corners between different facets of the recesses in the substrate surface, and the substrate surface can be used as a profile-transferring substrate surface for making a membrane having concave curved features. Alternatively, a handle layer is attached to the oxide layer and the substrate is removed until the backside of the oxide layer becomes exposed. The exposed backside of the oxide layer includes curved portions protruding away from the handle layer, and can provide a profile-transferring substrate surface for making a membrane having convex curved features.
Abstract translation: 公开了制造具有弯曲特征的膜的方法。 通过通过掩模的KOH蚀刻,在平面基板表面中形成各自呈倒棱锥形的凹部。 在衬底表面上形成氧化物层。 可以剥离氧化物层,在衬底表面中的凹槽的不同面之间留下圆角,并且衬底表面可以用作用于制造具有凹曲面特征的膜的轮廓转移衬底表面。 或者,将手柄层附接到氧化物层,并且去除衬底直到氧化物层的背面露出。 氧化物层的暴露背面包括远离手柄层突出的弯曲部分,并且可以提供用于制造具有凸形弯曲特征的膜的轮廓转移衬底表面。
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公开(公告)号:US20130051530A1
公开(公告)日:2013-02-28
申请号:US13221540
申请日:2011-08-30
Applicant: Mark Nepomnishy , Shinya Sugimoto , Yasuhisa Kaneko
Inventor: Mark Nepomnishy , Shinya Sugimoto , Yasuhisa Kaneko
IPC: G21K1/06
CPC classification number: G21K1/06 , G21K1/025 , G21K2201/067
Abstract: Semiconductor substrates with high aspect ratio recesses formed therein are described. The high aspect ratio recesses have bottom surface profile characteristics that promote formation of initial growth sites of plated metal as compared to the side surfaces of the recesses. Processes for making and plating the recesses are also disclosed. The metal-plated high aspect ratio recesses can be used as X-ray gratings in Phase Contrast X-ray imaging apparatuses.
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公开(公告)号:US20120234946A1
公开(公告)日:2012-09-20
申请号:US13484117
申请日:2012-05-30
Applicant: Gregory DeBrabander , Mark Nepomnishy
Inventor: Gregory DeBrabander , Mark Nepomnishy
CPC classification number: B41J2/161 , B41J2/162 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B81B2201/052 , B81C1/00087
Abstract: Fluid ejection nozzles having a tapered section leading to a straight walled bore are described. Both the tapered section of the nozzle and the straight walled bore are formed from a single side of semiconductor layer so that the tapered section and the bore are aligned with one another, even when an array of nozzles are formed across a die and multiple dies are formed on a semiconductor substrate.
Abstract translation: 描述了具有导向直壁的锥形部分的流体喷射嘴。 喷嘴的锥形部分和直壁孔均由半导体层的单侧形成,使得锥形部分和孔彼此对准,即使在模具之间形成喷嘴阵列并且多个模具是 形成在半导体衬底上。
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公开(公告)号:US08197029B2
公开(公告)日:2012-06-12
申请号:US12346698
申请日:2008-12-30
Applicant: Gregory Debrabander , Mark Nepomnishy
Inventor: Gregory Debrabander , Mark Nepomnishy
IPC: B41J2/135
CPC classification number: B41J2/161 , B41J2/162 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B81B2201/052 , B81C1/00087
Abstract: Fluid ejection nozzles having a tapered section leading to a straight walled bore are described. Both the tapered section of the nozzle and the straight walled bore are formed from a single side of semiconductor layer so that the tapered section and the bore are aligned with one another, even when an array of nozzles are formed across a die and multiple dies are formed on a semiconductor substrate.
Abstract translation: 描述了具有导向直壁的锥形部分的流体喷射嘴。 喷嘴的锥形部分和直壁孔均由半导体层的单侧形成,使得锥形部分和孔彼此对准,即使在模具之间形成喷嘴阵列并且多个模具是 形成在半导体衬底上。
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公开(公告)号:US20110242219A1
公开(公告)日:2011-10-06
申请号:US12752062
申请日:2010-03-31
Applicant: Mark Nepomnishy , Gregory De Brabander , Andreas Bibl
Inventor: Mark Nepomnishy , Gregory De Brabander , Andreas Bibl
CPC classification number: H01L29/66007 , B41J2/1606 , B41J2/161 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1639 , B41J2/1642
Abstract: A method of forming a nozzle plate of a fluid ejection device includes etching a bore in the first side of the multi-layer substrate, depositing a liner in the bore, removing a layer from a second side of the multi-layer substrate, wherein the removing exposes a closed end of the liner, applying a non-wetting coating to the closed end of the liner and an area surrounding the closed end of the liner, and removing the closed end of the liner, wherein removing the closed end of the liner opens a nozzle.
Abstract translation: 形成流体喷射装置的喷嘴板的方法包括蚀刻多层基板的第一侧中的孔,在孔中沉积衬垫,从多层衬底的第二侧移除层,其中 去除暴露衬套的封闭端,将不湿润涂层施加到衬垫的封闭端和围绕衬套封闭端的区域,以及去除衬套的封闭端,其中移除衬套的封闭端 打开一个喷嘴。
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公开(公告)号:US08969105B2
公开(公告)日:2015-03-03
申请号:US13810696
申请日:2011-07-22
Applicant: Paul A. Hoisington , Jeffrey Birkmeyer , Andreas Bibl , Mats G. Ottosson , Gregory De Brabander , Zhenfang Chen , Mark Nepomnishy , Shinya Sugimoto
Inventor: Paul A. Hoisington , Jeffrey Birkmeyer , Andreas Bibl , Mats G. Ottosson , Gregory De Brabander , Zhenfang Chen , Mark Nepomnishy , Shinya Sugimoto
CPC classification number: H01L41/332 , B41J2/14233 , B41J2/1607 , B41J2/161 , B41J2/1626 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2/1646 , B41J2002/14241 , H01L41/098 , H01L41/22 , H01L41/316 , H01L41/33
Abstract: Processes for forming an actuator having a curved piezoelectric membrane are disclosed. The processes utilize a profile-transferring substrate having a curved surface surrounded by a planar surface to form the curved piezoelectric membrane. The piezoelectric material used for the piezoelectric actuator is deposited on at least the curved surface of the profile-transferring substrate before the profile-transferring substrate is removed from the underside of the curved piezoelectric membrane. The resulting curved piezoelectric membrane includes grain structures that are columnar and aligned, and all or substantially all of the columnar grains are locally perpendicular to the curved surface of the piezoelectric membrane.
Abstract translation: 公开了一种用于形成具有弯曲压电膜的致动器的工艺。 该工艺利用具有由平面表面包围的弯曲表面的轮廓转印衬底以形成弯曲的压电膜。 用于压电致动器的压电材料沉积在轮廓转移衬底的至少曲面上,然后从曲面压电膜的下侧移除轮廓转移衬底。 所形成的弯曲压电膜包括柱状和对准的晶粒结构,并且所有或基本上所有的柱状晶粒局部垂直于压电膜的弯曲表面。
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公开(公告)号:US20130210175A1
公开(公告)日:2013-08-15
申请号:US13810696
申请日:2011-07-22
Applicant: Paul A. Hoisington , Jeffrey Birkmeyer , Andreas Bibl , Mats G. Ottosson , Gregory De Brabander , Zhenfang Chen , Mark Nepomnishy , Shinya Sugimoto
Inventor: Paul A. Hoisington , Jeffrey Birkmeyer , Andreas Bibl , Mats G. Ottosson , Gregory De Brabander , Zhenfang Chen , Mark Nepomnishy , Shinya Sugimoto
IPC: H01L41/22
CPC classification number: H01L41/332 , B41J2/14233 , B41J2/1607 , B41J2/161 , B41J2/1626 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2/1646 , B41J2002/14241 , H01L41/098 , H01L41/22 , H01L41/316 , H01L41/33
Abstract: Processes for forming an actuator having a curved piezoelectric membrane are disclosed. The processes utilize a profile-transferring substrate having a curved surface surrounded by a planar surface to form the curved piezoelectric membrane. The piezoelectric material used for the piezoelectric actuator is deposited on at least the curved surface of the profile-transferring substrate before the profile-transferring substrate is removed from the underside of the curved piezoelectric membrane. The resulting curved piezoelectric membrane includes grain structures that are columnar and aligned, and all or substantially all of the columnar grains are locally perpendicular to the curved surface of the piezoelectric membrane.
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公开(公告)号:US20100165048A1
公开(公告)日:2010-07-01
申请号:US12346698
申请日:2008-12-30
Applicant: Gregory DeBrabander , Mark Nepomnishy
Inventor: Gregory DeBrabander , Mark Nepomnishy
IPC: B41J2/16 , H01L21/302
CPC classification number: B41J2/161 , B41J2/162 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B81B2201/052 , B81C1/00087
Abstract: Fluid ejection nozzles having a tapered section leading to a straight walled bore are described. Both the tapered section of the nozzle and the straight walled bore are formed from a single side of semiconductor layer so that the tapered section and the bore are aligned with one another, even when an array of nozzles are formed across a die and multiple dies are formed on a semiconductor substrate.
Abstract translation: 描述了具有导向直壁的锥形部分的流体喷射嘴。 喷嘴的锥形部分和直壁孔均由半导体层的单侧形成,使得锥形部分和孔彼此对准,即使在模具之间形成喷嘴阵列并且多个模具是 形成在半导体衬底上。
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公开(公告)号:US08628677B2
公开(公告)日:2014-01-14
申请号:US13077531
申请日:2011-03-31
Applicant: Gregory De Brabander , Mark Nepomnishy
Inventor: Gregory De Brabander , Mark Nepomnishy
IPC: C03C15/00
CPC classification number: B81C1/00103 , B81B2201/0257 , B81B2201/038 , B81B2203/0127 , B81B2203/0353 , B81B2203/0376
Abstract: Processes for making a profile-transferring substrate surface and membranes having curved features are disclosed. A profile-transferring substrate surface having a curved feature is created by isotropic plasma etching through a shadow mask. The shadow mask has a through hole which has a lower portion adjacent to the bottom surface of the shadow mask and an upper portion that is above and narrower than the lower portion. The isotropic plasma etching through the shadow mask can create a curved dent in a planar substrate in a central portion of an area enclosed by the bottom opening. After the shadow mask is removed. A uniform layer of material deposited over the exposed surface of the substrate will include a curved feature at the location of the curved dent in the substrate surface.
Abstract translation: 公开了用于制造轮廓转印衬底表面的工艺和具有弯曲特征的膜。 通过荫罩的各向同性等离子体蚀刻产生具有弯曲特征的轮廓转印衬底表面。 荫罩具有通孔,该通孔具有与荫罩的底面相邻的下部,上部比下部窄。 通过荫罩的各向同性等离子体蚀刻可以在由底部开口包围的区域的中心部分中的平面基板中产生弯曲的凹陷。 阴影面具被删除后。 沉积在基板的暴露表面上的均匀的材料层将在基板表面中的弯曲凹陷的位置处包括弯曲特征。
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