发明申请
- 专利标题： Apparatus and Methods for Annealing Wafers
- 专利标题（中）： 退火晶圆的设备和方法
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申请号： US13215909申请日： 2011-08-23
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公开(公告)号： US20130052837A1公开(公告)日： 2013-02-28
- 发明人: Yi-Chao Wang , Yu-Chang Lin , Li-Ting Wang , Tai-Chun Huang , Pei-Ren Jeng , Tze-Liang Lee
- 申请人： Yi-Chao Wang , Yu-Chang Lin , Li-Ting Wang , Tai-Chun Huang , Pei-Ren Jeng , Tze-Liang Lee
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/268
- IPC分类号： H01L21/268 ; B23K26/00
摘要：
A method includes performing an anneal on a wafer. The wafer includes a wafer-edge region, and an inner region encircled by the wafer-edge region. During the anneal, a first power applied on a portion of the wafer-edge region is at least lower than a second power for annealing the inner region.
公开/授权文献
- US09337059B2 Apparatus and methods for annealing wafers 公开/授权日：2016-05-10
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