发明申请
- 专利标题: Method for Determining BSIMSOI4 DC Model Parameters
- 专利标题(中): 确定BSIMSOI4直流模型参数的方法
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申请号: US13696455申请日: 2011-09-25
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公开(公告)号: US20130054210A1公开(公告)日: 2013-02-28
- 发明人: Jing Chen , Qingqing Wu , Jiexin Luo , Zhan Chai , Xi Wang
- 申请人: Jing Chen , Qingqing Wu , Jiexin Luo , Zhan Chai , Xi Wang
- 申请人地址: CN Shanghai
- 专利权人: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
- 当前专利权人: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
- 当前专利权人地址: CN Shanghai
- 优先权: CN201010515128.3 20101021
- 国际申请: PCT/CN2011/080145 WO 20110925
- 主分类号: G06F17/10
- IPC分类号: G06F17/10
摘要:
The present invention provides a method for determining BSIMSOI4 Direct Current (DC) model parameters, where a plurality of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices of a body leading-out structure and of different sizes, and a plurality of MOSFET devices of a floating structure and of different sizes are provided; Id-Vg-Vp, Id/Ip-Vd-Vg, Ig-Vg-Vd, Ig-Vp, Ip-Vg-vd, Is/Id-Vp, and Id/Ip-Vp-Vd properties of all the MOSFET devices of a body leading-out structure, and Id-Vg-Vp, Id-Vd-Vg, and Ig-Vg-Vd properties of all the MOSFET devices of a floating structure are measured; electrical property curves without a self-heating effect of each MOSFET device of a body leading-out structure and each MOSFET device of a floating structure are obtained; and then DC parameters of a BSIMSOI4 model are successively extracted according to specific steps. In the present invention, proper test curves are successively selected according to model equations, and various kinds of parameters are successively determined, thereby accurately and effectively extracting the DC parameters of the BSIMSOI4 model.
公开/授权文献
- US09134361B2 Method for determining BSIMSOI4 DC model parameters 公开/授权日:2015-09-15
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