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公开(公告)号：US20220396485A1
公开(公告)日：2022-12-15
申请号：US17477573
申请日：2021-09-17
发明人： Hongyan ZHU , Tianru WU , Jiebin GU , Chao ZHANG , Boxiang GAO
IPC分类号： C01B32/186
摘要： The present disclosure provides a method for preparing patterned graphene, and the method includes using a silicon carbide base as a solid-state carbon source, decomposing the silicon carbide under the action of high temperature and catalyst, to directly grow graphene on an insulating substrate. Through a first patterned trench and a second patterned trench in an accommodating passage, the pattern of the formed graphene can be directly controlled. Therefore, the present disclosure can accurately locate the position of the patterned graphene on the insulating substrate, it does not require transferring the graphene one more time, thereby avoiding contaminating the graphene and damaging its structure, and there is no need for photo-lithography, ion etching and other processes to treat the graphene in order to obtain patterned graphene, which further avoids damages to the graphene.
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公开(公告)号：US20220181150A1
公开(公告)日：2022-06-09
申请号：US17161318
申请日：2021-01-28
申请人： Zing Semiconductor Corporation , SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
发明人： Xing WEI , Nan GAO , Zhongying XUE
IPC分类号： H01L21/02 , H01L21/762 , H01L21/306
摘要： A method of making a silicon on insulator structure comprises: providing a bonded structure, the bonded structure comprises the first substrate, the second substrate and the insulating buried layer, the insulating buried layer is positioned between the first substrate and the second substrate; peeling off a layer of removing region of the first substrate from the bonded structure to obtain a first film; at a first temperature, performing a first etching to etch the first film to remove a first thickness of the first film; at a second temperature, performing a second etching to etch the first film to planarize the first film and remove a second thickness of the first film, the first temperature being lower than the second temperature, the first thickness being greater than the second thickness, and a sum of the first thickness and the second thickness being a total etching thickness of the first film.
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公开(公告)号：US20220002902A1
公开(公告)日：2022-01-06
申请号：US17139942
申请日：2020-12-31
申请人： Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Zing Semiconductor Corporation
发明人： Zhongying Xue , Yun Liu , Xing Wei , Zhan Li , Tao Wei , Minghao Li
摘要： Disclosed are a heat shield device for insulating heat and a smelting furnace. The heat shield device comprises a heat shield unit and a heat insulation unit. The heat shield unit comprises a shield bottom provided with a through hole, and a shield wall disposed on a side of the shield bottom opposite to the through hole. The heat insulation unit comprises a heat insulation part disposed above a layer plate of the shield bottom close to a liquid level of a crucible and a heat preservation part. The smelting furnace used for growth of monocrystalline silicon comprises the heat shield device, a crucible and a heater. The heat shield device of the present invention can increase a temperature gradient between the heat shield unit and the crucible, thereby facilitating rapid formation of silicon crystal bar and improving production efficiency of the silicon crystal bar.
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公开(公告)号：US10928304B2
公开(公告)日：2021-02-23
申请号：US15990777
申请日：2018-05-28
发明人： Haomin Wang , Lingxiu Chen , Li He , Huishan Wang , Hong Xie , Xiujun Wang , Xiaoming Xie
IPC分类号： G01N21/17 , C01B32/182 , C01B32/186 , B82Y40/00
摘要： A method for adjusting and controlling a boundary of graphene, comprising: providing an insulating substrate and placing the insulating substrate in a growth chamber; and feeding first reaction gas into the growth chamber, the first reaction gas at least comprising carbon source gas, and controlling a flow rate of the first reaction gas to forming a graphene structure having a first boundary shape on a surface of the insulating substrate through controlling a flow rate of the first reaction gas. The present invention realizes the controllability of the boundary of the graphene by adjusting the ratio of the carbon source gas to catalytic gas in the growth process of graphene on the surface of the substrate; the present invention can enable graphene to sequentially continuously grow by changing growth conditions on the basis of already formed graphene, so as to change the original boundary shape of the graphene.
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公开(公告)号：US20190094128A1
公开(公告)日：2019-03-28
申请号：US15990777
申请日：2018-05-28
发明人： HAOMIN WANG , LINGXIU CHEN , LI HE , HUISHAN WANG , HONG XIE , XIUJUN WANG , XIAOMING XIE
IPC分类号： G01N21/17 , B82Y40/00 , C01B32/182
摘要： A method for adjusting and controlling a boundary of graphene, comprising: providing an insulating substrate and placing the insulating substrate in a growth chamber; and feeding first reaction gas into the growth chamber, the first reaction gas at least comprising carbon source gas, and controlling a flow rate of the first reaction gas to forming a graphene structure having a first boundary shape on a surface of the insulating substrate through controlling a flow rate of the first reaction gas. The present invention realizes the controllability of the boundary of the graphene by adjusting the ratio of the carbon source gas to catalytic gas in the growth process of graphene on the surface of the substrate; the present invention can enable graphene to sequentially continuously grow by changing growth conditions on the basis of already formed graphene, so as to change the original boundary shape of the graphene.
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公开(公告)号：US20180002831A1
公开(公告)日：2018-01-04
申请号：US14762012
申请日：2015-03-26
发明人： HAOMIN WANG , SHUJIE TANG , GUANGYUAN LU , TIANRU WU , DA JIANG , GUQIAO DING , XUEFU ZHANG , HONG XIE , XIAOMING XIE , MIANHENG JIANG
CPC分类号： C30B25/205 , C23C14/0605 , C23C14/28 , C23C16/26 , C23C16/50 , C30B23/00 , C30B23/025 , C30B25/00 , C30B29/02
摘要： The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.
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公开(公告)号：US20170362463A1
公开(公告)日：2017-12-21
申请号：US15219540
申请日：2016-07-26
申请人： Shanghai Xinanna Electronic Technology Co., LTD , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
发明人： Weilei Wang , Weili Liu , Zhitang Song
CPC分类号： C09G1/02 , C09K3/1436
摘要： The present disclosure provides a method for preparing an aluminum oxide polishing solution. The methods include: 1) mixing a silane coupling agent, ethyl alcohol, and water to form a hydrolysate; 2) under a condition of heating and stirring at a temperature between 95° C. and 110° C., adding the hydrolysate into aluminum oxide powder; keeping stirring while heating till liquid is completely volatilized, thereby obtaining a modified aluminum oxide; 3) grinding the modified aluminum oxide into powder and dispersing the powder into water; adjusting solution pH to 9.5-10.5, thereby obtaining the aluminum oxide polishing solution. It may achieve a polishing efficiency of pH=13.00 by using the aluminum oxide polishing solution of the present disclosure; meanwhile, less scratches will occur to a polishing disc.
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公开(公告)号：US20170233589A1
公开(公告)日：2017-08-17
申请号：US15219522
申请日：2016-07-26
申请人： Yongxia Wang , Weili Liu , Zhitang Song
发明人： Yongxia Wang , Weili Liu , Zhitang Song
IPC分类号： C09D7/12 , C09D125/14 , B05D7/14 , C09D175/04
CPC分类号： C09D7/61 , B05D7/14 , C08K3/36 , C09D1/00 , C09D125/14 , C09D175/04
摘要： The present disclosure relates to the field of preparing an inorganic nanometer material and application thereof, and specifically relates to a film-forming silica sol, a method of preparing the silica sol, and usage thereof. The present disclosure provides a film-forming silica sol comprising, by weight percentage, constituents of: silica sol: 66-91%; modifying agent: 0.1-1.8%; film-forming auxiliary: 7.2-33.9%. The present disclosure further provides a method of preparing a film-forming silica sol and an application thereof. With the film-forming silica sol, a method of preparing the silica sol, and usage thereof according to the present disclosure, the prepared film-forming silica sol has a good appearance transparency and stability, and when applied to paint as a film-forming coating, it has a good glossiness, a high hardness, and a strong adhesive force; therefore, it has a high practical value in the paint field.
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公开(公告)号：US20170084814A1
公开(公告)日：2017-03-23
申请号：US15124668
申请日：2014-04-08
CPC分类号： H01L39/223 , H01L29/0676 , H01L39/2406 , H01L39/2416 , H01L39/2493
摘要： A nano-scale superconducting quantum interference device and a manufacturing method thereof, comprising the following steps of: S1: providing a substrate and growing a first superconducting material layer thereon; S2: forming a photo-resist layer and performing patterning; S3: etching the first superconducting material layer in a predetermined region; S4: covering a layer of insulation material on a top and a side of a structure obtained in step S3; S5: growing a second superconducting material layer; S6: removing the structure above the plane where the upper surface of the first superconducting material layer locates, to obtain a plane superconducting structure, in the middle of which at least one insulating interlayer is inserted; S7: forming at least one nanowire vertical to the insulating interlayer, to obtain the nano-scale superconducting quantum interference device. The width of the superconducting ring and the length of the nano junction are determined by the insulating interlayer.
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公开(公告)号：US09601337B2
公开(公告)日：2017-03-21
申请号：US14423234
申请日：2014-02-21
发明人： Zengfeng Di , Xiaohu Zheng , Gang Wang , Miao Zhang , Xi Wang
IPC分类号： H01L21/66 , H01L21/28 , H01L29/423 , H01L29/66 , H01L29/778 , H01L29/16 , H01L21/02 , H01L21/265 , H01L21/285 , H01L21/324 , H01L29/51 , H01L29/78
CPC分类号： H01L21/28255 , H01L21/02115 , H01L21/02181 , H01L21/02252 , H01L21/02271 , H01L21/0228 , H01L21/02315 , H01L21/02321 , H01L21/0234 , H01L21/02381 , H01L21/26513 , H01L21/2855 , H01L21/324 , H01L22/14 , H01L29/16 , H01L29/1606 , H01L29/42364 , H01L29/513 , H01L29/517 , H01L29/66431 , H01L29/66477 , H01L29/6659 , H01L29/7781 , H01L29/7833
摘要： A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device, which comprises the following steps: 1) introducing a graphene thin film on a Ge-based substrate; 2) conducting fluorination treatment to the graphene thin film to form fluorinated graphene; 3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology; and 4) forming a metal electrode on the surface of the high-k gate dielectric. Since the present invention utilizes the graphene as a passivation layer to inhibit the formation of unstable oxide GeOx on the surface of the Ge-based substrate and to stop mutual diffusion between the gate dielectric and the Ge-based substrate, the interface property between Ge and the high-k gate dielectric layer is improved. The fluorinated graphene can enable the graphene to become a high-quality insulator on the basis of keeping the excellent property of the graphene, so that the influence thereof on the electrical property of the Ge-based device is reduced. By adopting the ozone plasmas to treat the Ge-based graphene and then by adopting the atomic layer deposition technology, an ultrathin Hf-based high-k gate dielectric layer can be obtained.
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