发明申请
- 专利标题： MOS DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： MOS器件及其制造方法
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申请号： US13225349申请日： 2011-09-02
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公开(公告)号： US20130056825A1公开(公告)日： 2013-03-07
- 发明人: Chien-Chung Chen , Ming-Tung Lee , Shih-Chin Lien , Shyi-Yuan Wu
- 申请人： Chien-Chung Chen , Ming-Tung Lee , Shih-Chin Lien , Shyi-Yuan Wu
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A semiconductor device and method of forming the semiconductor device are disclosed, where the semiconductor device includes additional implant regions in the source and drain areas of the device for improving Ron-sp and BVD characteristics of the device. The device includes a gate electrode formed over a channel region that separates first and second implant regions in the device substrate. The first implant region has a first conductivity type, and the second implant region has a second conductivity type. A source diffusion region is formed in the first implant region, and a drain diffusion region is formed in the second implant region.
公开/授权文献
- US08829615B2 MOS device and method of manufacturing the same 公开/授权日：2014-09-09
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