发明申请
US20130062684A1 GATE STACK STRUCTURE AND FABRICATING METHOD USED FOR SEMICONDUCTOR FLASH MEMORY DEVICE
审中-公开
用于半导体闪存存储器件的栅极堆叠结构和制作方法
- 专利标题： GATE STACK STRUCTURE AND FABRICATING METHOD USED FOR SEMICONDUCTOR FLASH MEMORY DEVICE
- 专利标题（中）： 用于半导体闪存存储器件的栅极堆叠结构和制作方法
-
申请号： US13518306申请日： 2011-05-24
-
公开(公告)号： US20130062684A1公开(公告)日： 2013-03-14
- 发明人: Shijin Ding , Hongyan Gou , Wei Zhang
- 申请人： Shijin Ding , Hongyan Gou , Wei Zhang
- 申请人地址： CN Shanghai
- 专利权人： Fudan Univeristy
- 当前专利权人： Fudan Univeristy
- 当前专利权人地址： CN Shanghai
- 优先权： CN201010191659.1 20100603; CN201110130484.8 20110519
- 国际申请： PCT/CN2011/000891 WO 20110524
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/792
摘要：
The invention relates to a gate stack structure suitable for use in a semiconductor flash memory device and its fabricating method. The gate stack structure is fabricated on a p-type 100 silicon substrate, which also includes the following components in sequence from bottom to top: a charge tunnel layer of Al2O3 film, the first charge trapping layer of RuOx nanocrystals; the second charge trapping layer of high-k HxAlyOz film, a charge blocking layer of Al2O3 film, and a top electrode. In this invention, the RuOx nanocrystals have excellent thermal stability, and do not diffuse easily at high temperatures. The high-k HfxAlyOz film has high density charge traps.Pd with a high work function is used as the top electrode. Therefore, the present gate stack structure has vast practical prospects for nanocrystal memory devices.
信息查询
IPC分类:
