Invention Application
- Patent Title: FOCUS CONTROL METHOD FOR PHOTOLITHOGRAPHY
- Patent Title (中): 聚焦控制方法
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Application No.: US13227805Application Date: 2011-09-08
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Publication No.: US20130065328A1Publication Date: 2013-03-14
- Inventor: Jen-Pan WANG , Chien-Hsuan Liu , Ching-Hsien Chen , Chao-Chi Chen
- Applicant: Jen-Pan WANG , Chien-Hsuan Liu , Ching-Hsien Chen , Chao-Chi Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G03B27/52

Abstract:
A method comprises providing a semiconductor substrate having at least one layer of a material over the substrate. A sound is applied to the substrate, such that a sound wave is reflected by a top surface of the layer of material The sound wave is detected using a sensor. A topography of the top surface is determined based on the detected sound wave. The determined topography is used to control an immersion lithography process.
Public/Granted literature
- US08772054B2 Focus control method for photolithography Public/Granted day:2014-07-08
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