发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US13423664申请日: 2012-03-19
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公开(公告)号: US20130069135A1公开(公告)日: 2013-03-21
- 发明人: Koji Nakahara , Kazuhiro Matsuo , Masayuki Tanaka , Hirofumi Iikawa
- 申请人: Koji Nakahara , Kazuhiro Matsuo , Masayuki Tanaka , Hirofumi Iikawa
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 优先权: JP2011-204561 20110920
- 主分类号: H01L29/788
- IPC分类号: H01L29/788 ; H01L21/336
摘要:
A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a first stack including a first silicon nitride film or a high dielectric constant film interposed between a first and a second silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack. The second silicon nitride film is relatively thinner in the third region than in the first region.
公开/授权文献
- US08791521B2 Semiconductor device and method of manufacturing the same 公开/授权日:2014-07-29