- 专利标题: THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE
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申请号: US13483593申请日: 2012-05-30
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公开(公告)号: US20130075719A1公开(公告)日: 2013-03-28
- 发明人: Shintaro NAKANO , Tomomasa UEDA , Kentaro MIURA , Nobuyoshi SAITO , Tatsunori SAKANO , Hajime YAMAGUCHI
- 申请人: Shintaro NAKANO , Tomomasa UEDA , Kentaro MIURA , Nobuyoshi SAITO , Tatsunori SAKANO , Hajime YAMAGUCHI
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 优先权: JP2011-211657 20110927
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L21/336 ; H01L29/12 ; H01L29/22 ; B82Y99/00
摘要:
According to one embodiment, a thin film transistor includes a substrate, a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, a source electrode, and a drain electrode. The gate electrode is provided on a part of the substrate. The first insulating film covers the gate electrode. The oxide semiconductor film is provided on the gate electrode via the first insulating film. The second insulating film is provided on a part of the oxide semiconductor film. The source and drain electrodes are respectively connected to first and second portions of the oxide semiconductor film not covered with the second insulating film. The oxide semiconductor film includes an oxide semiconductor. Concentrations of hydrogen contained in the first and second insulating films are not less than 5×1020 atm/cm3, and not more than 1019 atm/cm3, respectively.