公开(公告)号：US09159836B2

公开(公告)日：2015-10-13

申请号：US13483593

申请日：2012-05-30

申请人： Shintaro Nakano ,  Tomomasa Ueda ,  Kentaro Miura ,  Nobuyoshi Saito ,  Tatsunori Sakano ,  Hajime Yamaguchi

发明人： Shintaro Nakano ,  Tomomasa Ueda ,  Kentaro Miura ,  Nobuyoshi Saito ,  Tatsunori Sakano ,  Hajime Yamaguchi

IPC分类号： H01L29/12 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02266 ,  H01L21/02565 ,  H01L27/3244 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78603 ,  H01L51/0096 ,  H01L2251/5338

摘要： According to one embodiment, a thin film transistor includes a substrate, a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, a source electrode, and a drain electrode. The gate electrode is provided on a part of the substrate. The first insulating film covers the gate electrode. The oxide semiconductor film is provided on the gate electrode via the first insulating film. The second insulating film is provided on a part of the oxide semiconductor film. The source and drain electrodes are respectively connected to first and second portions of the oxide semiconductor film not covered with the second insulating film. The oxide semiconductor film includes an oxide semiconductor. Concentrations of hydrogen contained in the first and second insulating films are not less than 5×1020 atm/cm3, and not more than 1019 atm/cm3, respectively.

摘要翻译： 根据一个实施例，薄膜晶体管包括衬底，栅电极，第一绝缘膜，氧化物半导体膜，第二绝缘膜，源电极和漏电极。 栅电极设置在基板的一部分上。 第一绝缘膜覆盖栅电极。 氧化物半导体膜经由第一绝缘膜设置在栅电极上。 第二绝缘膜设置在氧化物半导体膜的一部分上。 源极和漏极分别连接到未被第二绝缘膜覆盖的氧化物半导体膜的第一和第二部分。 氧化物半导体膜包括氧化物半导体。 第一绝缘膜和第二绝缘膜中含有的氢的浓度分别为5×1020atm / cm 3以上1019atm / cm 3以下。

公开(公告)号：US20150247535A1

公开(公告)日：2015-09-03

申请号：US14428550

申请日：2013-09-25

申请人： Hirotaka SUNADA ,  Masao NAKAYAMA ,  Hideki TSUTSUI ,  Shintaro NAKANO ,  Daisuke KOBAYASHI

发明人： Hirotaka Sunada ,  Masao Nakayama ,  Hideki Tsutsui ,  Shintaro Nakano ,  Daisuke Kobayashi

IPC分类号： F16D23/12 ,  F16D27/108 ,  F16D15/00

CPC分类号： F16D23/12 ,  F16D13/76 ,  F16D15/00 ,  F16D27/108 ,  F16D41/088 ,  F16D2023/123

摘要： A clutch is provided with a drive-side rotational body and a driven-side rotational body, which can move in the axial direction between a coupled position and a decoupled position. The driven-side rotational body has a groove having a helical portion and an annular portion that is deeper than the helical portion. The driven-side rotational body is urged toward the coupled position by an urging member. The driven-side rotational body is moved to the decoupled position against the urging force of the urging member by insertion of a pin into the helical portion. A projection is provided on the tip of the pin, and a recessed groove for accommodating the projection when the pin is inserted into the helical portion is provided in the bottom surface of the helical portion.

摘要翻译： 离合器设置有驱动侧旋转体和从动侧旋转体，其可以在联接位置和解耦位置之间沿轴向移动。 从动侧旋转体具有一个具有螺旋部分和比螺旋部分更深的环形部分的凹槽。 从动侧旋转体通过施力部件向联接位置推压。 通过将销插入螺旋部分中，被驱动侧旋转体抵抗推动构件的作用力而移动到解耦位置。 在销的顶端设置有突起，在螺旋部的底面设置有用于在销插入螺旋部时容纳突起的凹槽。

公开(公告)号：US08933444B2

公开(公告)日：2015-01-13

申请号：US13724294

申请日：2012-12-21

申请人： Nobuyoshi Saito ,  Kentaro Miura ,  Shintaro Nakano ,  Tatsunori Sakano ,  Tomomasa Ueda ,  Hajime Yamaguchi

发明人： Nobuyoshi Saito ,  Kentaro Miura ,  Shintaro Nakano ,  Tatsunori Sakano ,  Tomomasa Ueda ,  Hajime Yamaguchi

IPC分类号： H01L51/52 ,  H01L27/32 ,  H01L29/786

CPC分类号： H01L51/5203 ,  H01L27/3262 ,  H01L29/7869

摘要： According to one embodiment, a display device includes a substrate, a thin film transistor, a passivation film, a hydrogen barrier film, a pixel electrode, an organic light emitting layer, an opposite electrode, and a sealing film. The thin film transistor is provided on a major surface of the substrate. The thin film transistor includes a gate electrode, a gate insulating film, a semiconductor film, a first conducting portion, and a second conducting portion. The passivation film is provided on the thin film transistor. The hydrogen barrier film is provided on the passivation film. The pixel electrode is electrically connected to one of the first conducting portion and the second conducting portion. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The sealing film is provided on the hydrogen barrier film and the opposite electrode.

摘要翻译： 根据一个实施例，显示装置包括基板，薄膜晶体管，钝化膜，氢阻挡膜，像素电极，有机发光层，相对电极和密封膜。 薄膜晶体管设置在基板的主表面上。 薄膜晶体管包括栅电极，栅极绝缘膜，半导体膜，第一导电部分和第二导电部分。 钝化膜设置在薄膜晶体管上。 氢屏障膜设置在钝化膜上。 像素电极电连接到第一导电部分和第二导电部分中的一个。 有机发光层设置在像素电极上。 相对电极设置在有机发光层上。 密封膜设置在氢阻挡膜和相对电极上。

公开(公告)号：US20130313545A1

公开(公告)日：2013-11-28

申请号：US13724294

申请日：2012-12-21

申请人： Nobuyoshi SAITO ,  Kentaro MIURA ,  Shintaro NAKANO ,  Tatsunori SAKANO ,  Tomomasa UEDA ,  Hajime YAMAGUCHI

发明人： Nobuyoshi SAITO ,  Kentaro MIURA ,  Shintaro NAKANO ,  Tatsunori SAKANO ,  Tomomasa UEDA ,  Hajime YAMAGUCHI

IPC分类号： H01L51/52 ,  H01L29/786

CPC分类号： H01L51/5203 ,  H01L27/3262 ,  H01L29/7869

摘要： According to one embodiment, a display device includes a substrate, a thin film transistor, a passivation film, a hydrogen barrier film, a pixel electrode, an organic light emitting layer, an opposite electrode, and a sealing film. The thin film transistor is provided on a major surface of the substrate. The thin film transistor includes a gate electrode, a gate insulating film, a semiconductor film, a first conducting portion, and a second conducting portion. The passivation film is provided on the thin film transistor. The hydrogen barrier film is provided on the passivation film. The pixel electrode is electrically connected to one of the first conducting portion and the second conducting portion. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The sealing film is provided on the hydrogen barrier film and the opposite electrode.

摘要翻译： 根据一个实施例，显示装置包括基板，薄膜晶体管，钝化膜，氢阻挡膜，像素电极，有机发光层，相对电极和密封膜。 薄膜晶体管设置在基板的主表面上。 薄膜晶体管包括栅电极，栅极绝缘膜，半导体膜，第一导电部分和第二导电部分。 钝化膜设置在薄膜晶体管上。 氢屏障膜设置在钝化膜上。 像素电极电连接到第一导电部分和第二导电部分中的一个。 有机发光层设置在像素电极上。 相对电极设置在有机发光层上。 密封膜设置在氢阻挡膜和相对电极上。

公开(公告)号：US20120058601A1

公开(公告)日：2012-03-08

申请号：US13293298

申请日：2011-11-10

申请人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

发明人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

IPC分类号： H01L21/34

CPC分类号： H01L27/1225 ,  H01L27/127 ,  H01L27/3244 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2227/323

摘要： A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; source and drain electrodes provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source and drain electrodes above the gate electrode.

摘要翻译： 薄膜晶体管包括：绝缘层; 设置在所述绝缘层上的栅电极; 设置在栅电极上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层，所述半导体层由氧化物形成; 源电极和漏电极，设置在半导体层上; 以及设置在源电极和漏电极与半导体层之间的沟道保护层。 源电极与栅电极的一端相对。 漏电极与栅电极的另一端相对。 另一端与一端相反。 漏极与源电极分开。 沟道保护层覆盖半导体层的一部分的侧面的至少一部分。 半导体层的一部分不被栅电极上方的源电极和漏电极覆盖。

公开(公告)号：US20130277646A1

公开(公告)日：2013-10-24

申请号：US13721925

申请日：2012-12-20

申请人： Nobuyoshi SAITO ,  Tomomasa Ueda ,  Hajime Yamaguchi ,  Kentaro Miura ,  Shintaro Nakano ,  Tatsunori Sakano

发明人： Nobuyoshi SAITO ,  Tomomasa Ueda ,  Hajime Yamaguchi ,  Kentaro Miura ,  Shintaro Nakano ,  Tatsunori Sakano

IPC分类号： H01L51/52

CPC分类号： H01L51/52 ,  H01L27/3227 ,  H01L27/326

摘要： According to one embodiment, a display panel includes a substrate, a switching element, a pixel electrode, an organic light emitting layer, an opposite electrode, a detecting electrode, and an insulating layer. The substrate has a major surface. The switching element is provided on the major surface. The switching element includes a semiconductor layer. The pixel electrode is provided on the major surface. The pixel electrode is electrically connected to the switching element. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The detecting electrode is provided between the substrate and at least a part of the pixel electrode. The detecting electrode includes at least one element included in the semiconductor layer. The insulating layer is provided between the pixel electrode and the detecting electrode.

摘要翻译： 根据一个实施例，显示面板包括基板，开关元件，像素电极，有机发光层，相对电极，检测电极和绝缘层。 基板具有主表面。 开关元件设置在主表面上。 开关元件包括半导体层。 像素电极设置在主表面上。 像素电极电连接到开关元件。 有机发光层设置在像素电极上。 相对电极设置在有机发光层上。 检测电极设置在基板和像素电极的至少一部分之间。 检测电极包括包含在半导体层中的至少一个元件。 绝缘层设置在像素电极和检测电极之间。

公开(公告)号：US20100127266A1

公开(公告)日：2010-05-27

申请号：US12620112

申请日：2009-11-17

申请人： Nobuyoshi SAITO ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

发明人： Nobuyoshi SAITO ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

IPC分类号： H01L33/00 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1225 ,  H01L27/127 ,  H01L27/3244 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2227/323

摘要： A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode.

摘要翻译： 薄膜晶体管包括：绝缘层; 设置在所述绝缘层上的栅电极; 设置在栅电极上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层，所述半导体层由氧化物形成; 设置在半导体层上的源电极和漏电极; 以及设置在源电极和漏电极与半导体层之间的沟道保护层。 源电极与栅电极的一端相对。 漏电极与栅电极的另一端相对。 另一端与一端相反。 漏极与源电极分开。 沟道保护层覆盖半导体层的一部分的侧面的至少一部分。 半导体层的一部分没有被栅电极上方的源电极和漏电极覆盖。

公开(公告)号：US09759272B2

公开(公告)日：2017-09-12

申请号：US14428550

申请日：2013-09-25

申请人： Hirotaka Sunada ,  Masao Nakayama ,  Hideki Tsutsui ,  Shintaro Nakano ,  Daisuke Kobayashi

发明人： Hirotaka Sunada ,  Masao Nakayama ,  Hideki Tsutsui ,  Shintaro Nakano ,  Daisuke Kobayashi

IPC分类号： F16D23/12 ,  F16D41/08 ,  F16D15/00 ,  F16D27/108 ,  F16D13/76

CPC分类号： F16D23/12 ,  F16D13/76 ,  F16D15/00 ,  F16D27/108 ,  F16D41/088 ,  F16D2023/123

摘要： A clutch is provided with a drive-side rotational body and a driven-side rotational body, which can move in the axial direction between a coupled position and a decoupled position. The driven-side rotational body has a groove having a helical portion and an annular portion that is deeper than the helical portion. The driven-side rotational body is urged toward the coupled position by an urging member. The driven-side rotational body is moved to the decoupled position against the urging force of the urging member by insertion of a pin into the helical portion. A projection is provided on the tip of the pin, and a recessed groove for accommodating the projection when the pin is inserted into the helical portion is provided in the bottom surface of the helical portion.

公开(公告)号：US20150252857A1

公开(公告)日：2015-09-10

申请号：US14429666

申请日：2013-09-25

申请人： Hirotaka Sunada ,  Masao Nakayama ,  Hideki Tsutsui ,  Shintaro Nakano ,  Daisuke Kobayashi

发明人： Hirotaka Sunada ,  Masao Nakayama ,  Hideki Tsutsui ,  Shintaro Nakano ,  Daisuke Kobayashi

IPC分类号： F16D23/12 ,  F16D27/108 ,  F16D15/00

CPC分类号： F16D23/12 ,  F16D13/76 ,  F16D15/00 ,  F16D27/108 ,  F16D41/088 ,  F16D2023/123

摘要： The clutch is provided with a drive-side rotational body, a driven-side rotational body, driven-side rotational body, and an urging member. The driven-side rotational body is movable in the axial direction of the drive-side rotational body between a first position, at which the driven-side rotational body is coupled to the drive-side rotational body, and a second position, at which the driven-side rotational body is decoupled from the drive-side rotational body. The urging member urges the driven-side rotational body from the second position toward the first position. The driven-side rotational body includes a helical groove that extends in the urging direction of the urging member. The clutch is further provided with a pin that can be inserted into the helical groove.

摘要翻译： 离合器设置有驱动侧旋转体，从动侧旋转体，从动侧旋转体和推压部件。 从动侧旋转体可以在驱动侧旋转体的轴向在从动侧旋转体与驱动侧旋转体接合的第一位置与第二位置之间移动，在该第二位置， 从动侧转动体与驱动侧旋转体脱离。 推动构件将从动侧旋转体从第二位置向第一位置推压。 从动侧旋转体包括在施力部件的推压方向上延伸的螺旋槽。 离合器还设置有可以插入到螺旋槽中的销。

公开(公告)号：US20150247536A1

公开(公告)日：2015-09-03

申请号：US14428853

申请日：2013-09-25

申请人： Hirotaka SUNADA ,  Masao NAKAYAMA ,  Hideki TSUTSUI ,  Shintaro NAKANO ,  Daisuke KOBAYASHI

发明人： Hirotaka Sunada ,  Masao Nakayama ,  Hideki Tsutsui ,  Shintaro Nakano ,  Daisuke Kobayashi

IPC分类号： F16D23/12 ,  F16D27/108 ,  F16D15/00

CPC分类号： F16D23/12 ,  F16D13/76 ,  F16D15/00 ,  F16D27/108 ,  F16D41/088 ,  F16D2023/123

摘要： A clutch is provided with a drive-side rotational body and a driven-side rotational body, which is movable in the axial direction of the drive-side rotational body between a coupled position. The driven-side rotational body has a groove having a helical portion and an annular portion. The clutch also includes an urging member and a pin that is selectively inserted into and retracted from the groove. The clutch moves the driven-side rotational body to the decoupled position against the urging force of the urging member by inserting the pin in the helical portion. The clutch further includes a restricting portion that restricts shifting of the position of the pin from the annular portion to the helical portion when the pin is positioned in the annular portion.

摘要翻译： 离合器设置有驱动侧旋转体和从动侧旋转体，该驱动侧旋转体和从动侧旋转体可在驱动侧旋转体的轴向方向上在联接位置之间移动。 从动侧旋转体具有具有螺旋部和环状部的槽。 离合器还包括推动构件和选择性地插入到凹槽中并从凹槽缩回的销。 通过将销插入螺旋部分中，离合器克服推动构件的作用力将从动侧旋转体移动到解耦位置。 离合器还包括限制部分，当限制销定位在环形部分中时，限制部分将销的位置从环形部分移动到螺旋部分。