- 专利标题： SEMICONDUCTOR DEVICES WITH RAISED EXTENSIONS
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申请号： US13609747申请日： 2012-09-11
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公开(公告)号： US20130082311A1公开(公告)日： 2013-04-04
- 发明人: Kangguo Cheng , Bruce B. Doris , Balasubramanian S. Haran , Ali Khakifirooz , Pranita Kulkarni
- 申请人： Kangguo Cheng , Bruce B. Doris , Balasubramanian S. Haran , Ali Khakifirooz , Pranita Kulkarni
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
Transistor devices and methods of their fabrication are disclosed. In one method, a dummy gate structure is formed on a substrate. Bottom portions of the dummy gate structure are undercut. In addition, stair-shaped, raised source and drain regions are formed on the substrate and within at least one undercut formed by the undercutting. The dummy gate structure is removed and a replacement gate is formed on the substrate.
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