发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US13610935申请日： 2012-09-12
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公开(公告)号： US20130082334A1公开(公告)日： 2013-04-04
- 发明人: Hiroyuki NAKAMURA , Yukihiro Sato , Atsushi Fujiki , Tatsuhiro Seki
- 申请人： Hiroyuki NAKAMURA , Yukihiro Sato , Atsushi Fujiki , Tatsuhiro Seki
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 优先权： JP2011-214474 20110929
- 主分类号： H01L27/088
- IPC分类号： H01L27/088
摘要：
A semiconductor device is improved in reliability. A switching power MOSFET and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion via a conductive bonding material, and sealed in a resin. Over the main surface of the semiconductor chip, a metal plate is bonded to a source pad electrode of the power MOSFET. In the plan view, the metal plate does not overlap a sense MOSFET region where the sense MOSFET is formed. The metal plate is bonded to the source pad electrode so as to surround three of the sides of the sense MOSFET region.
公开/授权文献
- US08624379B2 Semiconductor device 公开/授权日：2014-01-07