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公开(公告)号：US20130082334A1
公开(公告)日：2013-04-04
申请号：US13610935
申请日：2012-09-12
IPC分类号： H01L27/088
CPC分类号： H01L27/088 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/73 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01015 , H01L2924/01047 , H01L2924/12036 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device is improved in reliability. A switching power MOSFET and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion via a conductive bonding material, and sealed in a resin. Over the main surface of the semiconductor chip, a metal plate is bonded to a source pad electrode of the power MOSFET. In the plan view, the metal plate does not overlap a sense MOSFET region where the sense MOSFET is formed. The metal plate is bonded to the source pad electrode so as to surround three of the sides of the sense MOSFET region.
摘要翻译： 提高了半导体器件的可靠性。 用于感测在功率MOSFET中流过的电流的开关功率MOSFET和感测MOSFET的面积比功率MOSFET小，形成在一个半导体芯片中。 半导体芯片通过导电接合材料安装在芯片安装部分上，并密封在树脂中。 在半导体芯片的主表面上，金属板被接合到功率MOSFET的源极焊盘电极。 在平面图中，金属板不与形成感测MOSFET的感测MOSFET区域重叠。 金属板与源极焊盘电极接合，以便围绕感测MOSFET区域的三个侧面。
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公开(公告)号：US08299599B2
公开(公告)日：2012-10-30
申请号：US13040234
申请日：2011-03-03
申请人： Hiroyuki Nakamura , Atsushi Fujiki , Tatsuhiro Seki , Nobuya Koike , Yukihiro Sato , Kisho Ashida
发明人： Hiroyuki Nakamura , Atsushi Fujiki , Tatsuhiro Seki , Nobuya Koike , Yukihiro Sato , Kisho Ashida
CPC分类号： H01L27/07 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L29/66 , H01L2224/02166 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40247 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48137 , H01L2224/48247 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01015 , H01L2924/01047 , H01L2924/12036 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP1, power MOSFETs Q1 and Q2 for the switch, a diode DD1 for detecting the heat generation of the power MOSFET Q1, a diode DD2 for detecting the heat generation of the power MOSFET Q2, and plural pad electrodes PD are formed. The power MOSFET Q1 and the diode DD1 are arranged in a first MOSFET region RG1 on the side of a side SD1, and the power MOSFET Q2 and the diode DD2 are arranged in a second MOSFET region RG2 on the side of a side SD2. The diode DD1 is arranged along the side SD1, the diode DD2 is arranged along the side SD2, and all pad electrodes PD other than the pad electrodes PDS1 and PDS2 for the source are arranged along a side SD3 between the diodes DD1 and DD2.
摘要翻译： 提高半导体器件的性能和可靠性。 对于半导体芯片CP1，用于开关的功率MOSFET Q1和Q2，用于检测功率MOSFET Q1的发热的二极管DD1，用于检测功率MOSFET Q2的发热的二极管DD2和多个焊盘电极PD 。 功率MOSFET Q1和二极管DD1布置在侧面SD1侧的第一MOSFET区域RG1中，功率MOSFET Q2和二极管DD2布置在侧面SD2侧的第二MOSFET区RG2中。 二极管DD1沿着侧面SD1配置，二极管DD2沿着侧面SD2配置，除了用于源极的焊盘电极PDS1和PDS2以外的所有焊盘电极PD沿着二极管DD1和DD2之间的侧面SD3排列。
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公开(公告)号：US08624379B2
公开(公告)日：2014-01-07
申请号：US13610935
申请日：2012-09-12
IPC分类号： H01L23/52
CPC分类号： H01L27/088 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/73 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01015 , H01L2924/01047 , H01L2924/12036 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device is improved in reliability. A switching power MOSFET and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion via a conductive bonding material, and sealed in a resin. Over the main surface of the semiconductor chip, a metal plate is bonded to a source pad electrode of the power MOSFET. In the plan view, the metal plate does not overlap a sense MOSFET region where the sense MOSFET is formed. The metal plate is bonded to the source pad electrode so as to surround three of the sides of the sense MOSFET region.
摘要翻译： 提高了半导体器件的可靠性。 用于感测在功率MOSFET中流过的电流的开关功率MOSFET和感测MOSFET的面积比功率MOSFET小，形成在一个半导体芯片中。 半导体芯片通过导电接合材料安装在芯片安装部分上，并密封在树脂中。 在半导体芯片的主表面上，金属板被结合到功率MOSFET的源极焊盘电极。 在平面图中，金属板不与形成感测MOSFET的感测MOSFET区域重叠。 金属板与源极焊盘电极接合，以便围绕感测MOSFET区域的三个侧面。
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公开(公告)号：US08232629B2
公开(公告)日：2012-07-31
申请号：US11841955
申请日：2007-08-20
申请人： Nobuya Koike , Atsushi Fujiki , Norio Kido , Yukihiro Sato , Hiroyuki Nakamura
发明人： Nobuya Koike , Atsushi Fujiki , Norio Kido , Yukihiro Sato , Hiroyuki Nakamura
IPC分类号： H01L23/495
CPC分类号： H01L21/565 , H01L23/49503 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/34 , H01L24/36 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/91 , H01L2224/04042 , H01L2224/29111 , H01L2224/29139 , H01L2224/32245 , H01L2224/32257 , H01L2224/40095 , H01L2224/40245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/49171 , H01L2224/49175 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： It is made for the layout of the mounting wiring at the time of mounting to become efficient by changing the structure of a semiconductor device.A first chip is mounted on a first die pad, and a second chip is also mounted on a second die pad. A first die pad and a second die pad do division structure in parallel to the first side and second side of sealing body 40. As a result, the pin for an output from a first chip and the pin for control of the circuit for a drive can make it able to project from a counter direction, and can set the wiring layout at the time of mounting as the minimum route.
摘要翻译： 通过改变半导体器件的结构，安装时的安装布线的布局变得有效。 第一芯片安装在第一芯片焊盘上，第二芯片也安装在第二芯片焊盘上。 第一管芯焊盘和第二管芯焊盘与密封体40的第一侧面和第二侧平行地进行分割结构。结果，用于从第一芯片输出的引脚和用于控制驱动电路的引脚 可以使其能够从反方向投影，并可以将安装时的布线布局设置为最小路线。
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公开(公告)号：US20120261825A1
公开(公告)日：2012-10-18
申请号：US13533391
申请日：2012-06-26
申请人： Nobuya KOIKE , Atsushi Fujiki , Norio Kido , Yukihiro Sato , Hiroyuki Nakamura
发明人： Nobuya KOIKE , Atsushi Fujiki , Norio Kido , Yukihiro Sato , Hiroyuki Nakamura
IPC分类号： H01L23/48
CPC分类号： H01L21/565 , H01L23/49503 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/34 , H01L24/36 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/91 , H01L2224/04042 , H01L2224/29111 , H01L2224/29139 , H01L2224/32245 , H01L2224/32257 , H01L2224/40095 , H01L2224/40245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/49171 , H01L2224/49175 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： It is made for the layout of the mounting wiring at the time of mounting to become efficient by changing the structure of a semiconductor device.A first chip is mounted on a first die pad, and a second chip is also mounted on a second die pad. A first die pad and a second die pad do division structure in parallel to the first side and second side of sealing body 40. As a result, the pin for an output from a first chip and the pin for control of the circuit for a drive can make it able to project from a counter direction, and can set the wiring layout at the time of mounting as the minimum route.
摘要翻译： 通过改变半导体器件的结构，安装时的安装布线的布局变得有效。 第一芯片安装在第一芯片焊盘上，第二芯片也安装在第二芯片焊盘上。 第一管芯焊盘和第二管芯焊盘与密封体40的第一侧面和第二侧平行地进行分割结构。结果，用于从第一芯片输出的引脚和用于控制驱动电路的引脚 可以使其能够从反方向投影，并可以将安装时的布线布局设置为最小路线。
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公开(公告)号：US09129979B2
公开(公告)日：2015-09-08
申请号：US13533391
申请日：2012-06-26
申请人： Nobuya Koike , Atsushi Fujiki , Norio Kido , Yukihiro Sato , Hiroyuki Nakamura
发明人： Nobuya Koike , Atsushi Fujiki , Norio Kido , Yukihiro Sato , Hiroyuki Nakamura
IPC分类号： H01L23/48 , H01L21/56 , H01L23/495 , H01L23/00
CPC分类号： H01L21/565 , H01L23/49503 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/34 , H01L24/36 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/91 , H01L2224/04042 , H01L2224/29111 , H01L2224/29139 , H01L2224/32245 , H01L2224/32257 , H01L2224/40095 , H01L2224/40245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/49171 , H01L2224/49175 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： It is made for the layout of the mounting wiring at the time of mounting to become efficient by changing the structure of a semiconductor device.A first chip is mounted on a first die pad, and a second chip is also mounted on a second die pad. A first die pad and a second die pad do division structure in parallel to the first side and second side of sealing body 40. As a result, the pin for an output from a first chip and the pin for control of the circuit for a drive can make it able to project from a counter direction, and can set the wiring layout at the time of mounting as the minimum route.
摘要翻译： 通过改变半导体器件的结构，安装时的安装布线的布局变得有效。 第一芯片安装在第一芯片焊盘上，第二芯片也安装在第二芯片焊盘上。 第一管芯焊盘和第二管芯焊盘与密封体40的第一侧面和第二侧平行地进行分割结构。结果，用于从第一芯片输出的引脚和用于控制驱动电路的引脚 可以使其能够从反方向投影，并可以将安装时的布线布局设置为最小路线。
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公开(公告)号：US20070001273A1
公开(公告)日：2007-01-04
申请号：US11476868
申请日：2006-06-29
申请人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
发明人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
IPC分类号： H01L23/495
CPC分类号： H01L23/49575 , H01L23/485 , H01L23/49568 , H01L23/49582 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L2224/04042 , H01L2224/05647 , H01L2224/0603 , H01L2224/2919 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48647 , H01L2224/48747 , H01L2224/48847 , H01L2224/49171 , H01L2224/73265 , H01L2224/83805 , H01L2224/8385 , H01L2224/85447 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/00011
摘要： A semiconductor device having a plurality of chips is reduced in size. In HSOP(semiconductor device) for driving a three-phase motor, a first semiconductor chip including a pMISFET and a second semiconductor chip including an nMISFET are mounted over each of a first tab, second tab, and third tab. The drains of the PMISFET and nMISFET over each tab are electrically connected with each other. Thus, two of six MISFETs can be placed over each of three tabs divided in correspondence with the number of phases of the motor, and they can be packaged in one in a compact manner. As a result, the size of the HSOP for driving a three-phase motor, having a plurality of chips can be reduced.
摘要翻译： 具有多个芯片的半导体器件的尺寸减小。 在用于驱动三相电机的HSOP（半导体器件）中，包括pMISFET的第一半导体芯片和包括nMISFET的第二半导体芯片安装在第一突片，第二突片和第三突片的每一个上。 每个接头上的PMISFET和nMISFET的漏极彼此电连接。 因此，可以将六个MISFET中的两个放置在与电机的相位数相对应地分开的三个接片中的每一个上，并且它们可以以紧凑的方式封装在一个中。 结果，可以减少具有多个芯片的用于驱动三相电动机的HSOP的尺寸。
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公开(公告)号：US20100140718A1
公开(公告)日：2010-06-10
申请号：US12706295
申请日：2010-02-16
申请人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
发明人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
IPC分类号： H01L27/092
CPC分类号： H01L23/49575 , H01L23/485 , H01L23/49568 , H01L23/49582 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L2224/04042 , H01L2224/05647 , H01L2224/0603 , H01L2224/2919 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48647 , H01L2224/48747 , H01L2224/48847 , H01L2224/49171 , H01L2224/73265 , H01L2224/83805 , H01L2224/8385 , H01L2224/85447 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/00011
摘要： A semiconductor device having a plurality of chips is reduced in size. In HSOP (semiconductor device) for driving a three-phase motor, a first semiconductor chip including a pMISFET and a second semiconductor chip including an nMISFET are mounted over each of a first tab, second tab, and third tab. The drains of the pMISFET and nMISFET over each tab are electrically connected with each other. Thus, two of six MISFETs can be placed over each of three tabs divided in correspondence with the number of phases of the motor, and they can be packaged in one in a compact manner. As a result, the size of the HSOP for driving a three-phase motor, having a plurality of chips can be reduced.
摘要翻译： 具有多个芯片的半导体器件的尺寸减小。 在用于驱动三相电机的HSOP（半导体器件）中，包括pMISFET的第一半导体芯片和包括nMISFET的第二半导体芯片安装在第一突片，第二突片和第三突片的每一个上。 pMISFET和nMISFET的漏极在每个接片上彼此电连接。 因此，可以将六个MISFET中的两个放置在与电机的相位数相对应地分开的三个接片中的每一个上，并且它们可以以紧凑的方式封装在一个中。 结果，可以减少具有多个芯片的用于驱动三相电动机的HSOP的尺寸。
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公开(公告)号：US07969000B2
公开(公告)日：2011-06-28
申请号：US12706295
申请日：2010-02-16
申请人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
发明人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
IPC分类号： H01L27/092
CPC分类号： H01L23/49575 , H01L23/485 , H01L23/49568 , H01L23/49582 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L2224/04042 , H01L2224/05647 , H01L2224/0603 , H01L2224/2919 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48647 , H01L2224/48747 , H01L2224/48847 , H01L2224/49171 , H01L2224/73265 , H01L2224/83805 , H01L2224/8385 , H01L2224/85447 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/00011
摘要： A semiconductor device having a plurality of chips is reduced in size. In HSOP (semiconductor device) for driving a three-phase motor, a first semiconductor chip including a pMISFET and a second semiconductor chip including an nMISFET are mounted over each of a first tab, second tab, and third tab. The drains of the pMISFET and nMISFET over each tab are electrically connected with each other. Thus, two of six MISFETs can be placed over each of three tabs divided in correspondence with the number of phases of the motor, and they can be packaged in one in a compact manner. As a result, the size of the HSOP for driving a three-phase motor, having a plurality of chips can be reduced.
摘要翻译： 具有多个芯片的半导体器件的尺寸减小。 在用于驱动三相电机的HSOP（半导体器件）中，包括pMISFET的第一半导体芯片和包括nMISFET的第二半导体芯片安装在第一突片，第二突片和第三突片的每一个上。 pMISFET和nMISFET的漏极在每个接片上彼此电连接。 因此，可以将六个MISFET中的两个放置在与电机的相位数相对应地分开的三个接片中的每一个上，并且它们可以以紧凑的方式封装在一个中。 结果，可以减少具有多个芯片的用于驱动三相电动机的HSOP的尺寸。
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公开(公告)号：US07692285B2
公开(公告)日：2010-04-06
申请号：US11476868
申请日：2006-06-29
申请人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
发明人： Yukihiro Sato , Norio Kido , Tatsuhiro Seki , Katsuo Ishizaka , Ichio Shimizu
IPC分类号： H01L23/495
CPC分类号： H01L23/49575 , H01L23/485 , H01L23/49568 , H01L23/49582 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L2224/04042 , H01L2224/05647 , H01L2224/0603 , H01L2224/2919 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48647 , H01L2224/48747 , H01L2224/48847 , H01L2224/49171 , H01L2224/73265 , H01L2224/83805 , H01L2224/8385 , H01L2224/85447 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/00011
摘要： A semiconductor device having a plurality of chips is reduced in size. In HSOP (semiconductor device) for driving a three-phase motor, a first semiconductor chip including a pMISFET and a second semiconductor chip including an nMISFET are mounted over each of a first tab, second tab, and third tab. The drains of the pMISFET and nMISFET over each tab are electrically connected with each other. Thus, two of six MISFETs can be placed over each of three tabs divided in correspondence with the number of phases of the motor, and they can be packaged in one in a compact manner. As a result, the size of the HSOP for driving a three-phase motor, having a plurality of chips can be reduced.
摘要翻译： 具有多个芯片的半导体器件的尺寸减小。 在用于驱动三相电机的HSOP（半导体器件）中，包括pMISFET的第一半导体芯片和包括nMISFET的第二半导体芯片安装在第一突片，第二突片和第三突片的每一个上。 pMISFET和nMISFET的漏极在每个接片上彼此电连接。 因此，可以将六个MISFET中的两个放置在与电机的相位数相对应地分开的三个接片中的每一个上，并且它们可以以紧凑的方式封装在一个中。 结果，可以减少具有多个芯片的用于驱动三相电动机的HSOP的尺寸。
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