发明申请
- 专利标题: MULTI-LAYER PATTERN FOR ALTERNATE ALD PROCESSES
- 专利标题(中): 用于替代ALD过程的多层模式
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申请号: US13250937申请日: 2011-09-30
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公开(公告)号: US20130084688A1公开(公告)日: 2013-04-04
- 发明人: David L. O'Meara , Aelan Mosden
- 申请人: David L. O'Meara , Aelan Mosden
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
A method of patterning a substrate. A sacrificial film is formed over a substrate and a pattern created therein. A first spacer layer is conformally deposited over the patterned sacrificial film and at least one horizontal portion of the first spacer layer is removed while vertical portions of the first spacer layer remain. A second spacer layer is conformally deposited over the patterned sacrificial film and the remaining portions of the first spacer layer. At least one horizontal portion of the second spacer layer is removed while vertical portions of the second spacer layer remain. Conformal deposition of the first and second spacer layers is optionally repeated one or more times. Conformal deposition of the first layer is optionally repeated. Then, one of the first or second spacer layers is removed while substantially leaving the vertical portions of the remaining one of the first or second spacer layers.
公开/授权文献
- US08809169B2 Multi-layer pattern for alternate ALD processes 公开/授权日:2014-08-19