Invention Application
- Patent Title: COMPOSITIONS FOR ETCHING AND METHODS OF FORMING A SEMICONDUCTOR DEVICE USING THE SAME
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Application No.: US13601064Application Date: 2012-08-31
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Publication No.: US20130092872A1Publication Date: 2013-04-18
- Inventor: Young-Taek Hong , Jinuk Lee , Junghun Lim , Jaewan Park , Chanjin Jeong , Hoon Han , Seonghwan Park , Yanghwa Lee , Sang Won Bae , Daehong Eom , Byoungmoon Yoon , Jihoon Jeong , Kyunghyun Kim , Kyounghwan Kim , ChangSup Mun , Se-Ho Cha , Yongsun Ko
- Applicant: Young-Taek Hong , Jinuk Lee , Junghun Lim , Jaewan Park , Chanjin Jeong , Hoon Han , Seonghwan Park , Yanghwa Lee , Sang Won Bae , Daehong Eom , Byoungmoon Yoon , Jihoon Jeong , Kyunghyun Kim , Kyounghwan Kim , ChangSup Mun , Se-Ho Cha , Yongsun Ko
- Assignee: Soulbrain Co., Ltd.,Samsung Electronics Co., Ltd.
- Current Assignee: Soulbrain Co., Ltd.,Samsung Electronics Co., Ltd.
- Priority: KR10-2011-0106461 20111018
- Main IPC: C09K13/06
- IPC: C09K13/06

Abstract:
Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
Public/Granted literature
- US08940182B2 Compositions for etching and methods of forming a semiconductor device using the same Public/Granted day:2015-01-27
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