发明申请
US20130093026A1 SELECTIVE FIN-SHAPING PROCESS USING PLASMA DOPING AND ETCHING FOR 3-DIMENSIONAL TRANSISTOR APPLICATIONS
有权
使用等离子体掺杂和三维晶体管应用蚀刻的选择性熔融成形工艺
- 专利标题： SELECTIVE FIN-SHAPING PROCESS USING PLASMA DOPING AND ETCHING FOR 3-DIMENSIONAL TRANSISTOR APPLICATIONS
- 专利标题（中）： 使用等离子体掺杂和三维晶体管应用蚀刻的选择性熔融成形工艺
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申请号： US13273527申请日： 2011-10-14
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公开(公告)号： US20130093026A1公开(公告)日： 2013-04-18
- 发明人: Clement Hsingjen WANN , Ling-Yen YEH , Chi-Yuan SHIH , Yi-Tang LIN , Chih-Sheng CHANG , Chi-Wen LIU
- 申请人： Clement Hsingjen WANN , Ling-Yen YEH , Chi-Yuan SHIH , Yi-Tang LIN , Chih-Sheng CHANG , Chi-Wen LIU
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L21/762 ; H01L29/78
摘要：
A semiconductor apparatus includes fin field-effect transistor (FinFETs) having shaped fins and regular fins. Shaped fins have top portions that may be smaller, larger, thinner, or shorter than top portions of regular fins. The bottom portions of shaped fins and regular fins are the same. FinFETs may have only one or more shaped fins, one or more regular fins, or a mixture of shaped fins and regular fins. A semiconductor manufacturing process to shape one fin includes forming a photolithographic opening of one fin, optionally doping a portion of the fin, and etching a portion of the fin.