发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND STRUCTURE
- 专利标题（中）： 半导体器件和结构
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申请号： US13276312申请日： 2011-10-18
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公开(公告)号： US20130095580A1公开(公告)日： 2013-04-18
- 发明人: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Ze'ev Wurman
- 申请人： Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Ze'ev Wurman
- 主分类号： H01L21/71
- IPC分类号： H01L21/71 ; H01L21/66 ; H01L21/76 ; H01L21/82
摘要：
A method for formation of a semiconductor device including a first mono-crystalline layer comprising first transistors and first alignment marks, the method comprising forming a doped layer within a wafer, forming a second mono-crystalline layer on top of the first mono-crystalline layer by transferring at least a portion of the doped layer using layer transfer step, and processing second transistors on the second mono-crystalline layer comprising a step of forming a gate dielectric, wherein the second transistors are horizontally oriented.
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