发明申请
- 专利标题： METHOD FOR CONTROLLING STRUCTURE HEIGHT
- 专利标题（中）： 控制结构高度的方法
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申请号： US13278301申请日： 2011-10-21
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公开(公告)号： US20130102125A1公开(公告)日： 2013-04-25
- 发明人: Rajasekhar Venigalla , Michael Vincent Aquilino , Massud A. Aminpur , Michael P. Belyansky , Unoh Kwon , Christopher Duncan Sheraw , Daewon Yang
- 申请人： Rajasekhar Venigalla , Michael Vincent Aquilino , Massud A. Aminpur , Michael P. Belyansky , Unoh Kwon , Christopher Duncan Sheraw , Daewon Yang
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/28
摘要：
Methods for controlling the height of semiconductor structures are disclosed. Amorphous carbon is used as a stopping layer for controlling height variability. In one embodiment, the height of replacement metal gates for transistors is controlled. In another embodiment, the step height of a shallow trench isolation region is controlled.
公开/授权文献
- US08557649B2 Method for controlling structure height 公开/授权日：2013-10-15
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