发明申请
- 专利标题： ETCHING LIQUID FOR FILM OF MULTILAYER STRUCTURE CONTAINING COPPER LAYER AND MOLYBDENUM LAYER
- 专利标题（中）： 用于包含铜层和钼层的多层结构膜的蚀刻液
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申请号： US13805118申请日： 2011-05-27
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公开(公告)号： US20130105729A1公开(公告)日： 2013-05-02
- 发明人: Satoshi Tamai , Satoshi Okabe , Masahide Matsubara , Kunio Yube
- 申请人： Satoshi Tamai , Satoshi Okabe , Masahide Matsubara , Kunio Yube
- 申请人地址： JP Tokyo
- 专利权人： MITSUBISHI GAS CHEMICAL COMPANY, INC.
- 当前专利权人： MITSUBISHI GAS CHEMICAL COMPANY, INC.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-139783 20100618
- 国际申请： PCT/JP11/62218 WO 20110527
- 主分类号： C23F1/10
- IPC分类号： C23F1/10
摘要：
The present invention relates to an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, and a method of etching a multilayer thin film containing a copper layer and a molybdenum layer using the etching solution. There are provided an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, including (A) an organic acid ion supply source containing two or more carboxyl groups and one or more hydroxyl groups in a molecule thereof, (B) a copper ion supply source and (C) an ammonia and/or ammonium ion supply source, the etching solution having a pH value of from 5 to 8, and an etching method using the etching solution.