发明申请
US20130105810A1 COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC CIRCUIT
审中-公开
化合物半导体器件，其制造方法和电子电路
- 专利标题： COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC CIRCUIT
- 专利标题（中）： 化合物半导体器件，其制造方法和电子电路
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申请号： US13613158申请日： 2012-09-13
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公开(公告)号： US20130105810A1公开(公告)日： 2013-05-02
- 发明人: Masato Nishimori , Toshihiro Ohki , Toshihide Kikkawa
- 申请人： Masato Nishimori , Toshihiro Ohki , Toshihide Kikkawa
- 申请人地址： JP Kawasaki-shi
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2011-241703 20111102
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L29/06 ; H01L21/20
摘要：
A compound semiconductor device includes: a first compound semiconductor layer in which carriers are formed; a second compound semiconductor layer, provided above the first compound semiconductor layer, to supply the carriers; and a third compound semiconductor layer provided above the second compound semiconductor layer, wherein the third compound semiconductor layer includes a area that has a carrier concentration higher than a carrier concentration of the second compound semiconductor layer.
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