公开(公告)号：US20130105810A1

公开(公告)日：2013-05-02

申请号：US13613158

申请日：2012-09-13

申请人： Masato Nishimori ,  Toshihiro Ohki ,  Toshihide Kikkawa

发明人： Masato Nishimori ,  Toshihiro Ohki ,  Toshihide Kikkawa

IPC分类号： H01L29/20 ,  H01L29/06 ,  H01L21/20

CPC分类号： H01L29/66462 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/7787 ,  H03F1/3247 ,  H03F3/189 ,  H03F3/245

摘要： A compound semiconductor device includes: a first compound semiconductor layer in which carriers are formed; a second compound semiconductor layer, provided above the first compound semiconductor layer, to supply the carriers; and a third compound semiconductor layer provided above the second compound semiconductor layer, wherein the third compound semiconductor layer includes a area that has a carrier concentration higher than a carrier concentration of the second compound semiconductor layer.

摘要翻译： 化合物半导体器件包括：形成载流子的第一化合物半导体层; 设置在所述第一化合物半导体层上方的第二化合物半导体层，以供应所述载体; 以及设置在所述第二化合物半导体层上方的第三化合物半导体层，其中所述第三化合物半导体层包括载流子浓度高于所述第二化合物半导体层的载流子浓度的区域。

公开(公告)号：US20130032818A1

公开(公告)日：2013-02-07

申请号：US13552894

申请日：2012-07-19

申请人： Masato Nishimori ,  Toshihide Kikkawa

发明人： Masato Nishimori ,  Toshihide Kikkawa

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/1075 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： A semiconductor device includes a buffer layer that is disposed over a substrate, a high-resistance layer that is disposed over the buffer layer, the high-resistance layer being doped with a transition metal for achieving high resistance, a low-resistance region that is disposed in a portion of the high-resistance layer or over the high-resistance layer, the low-resistance region being doped with an impurity element for achieving low resistance, an electron travel layer that is disposed over the high-resistance layer including the low-resistance region, an electron supply layer that is disposed over the electron travel layer, a gate electrode that is disposed over the electron supply layer, and a source electrode and a drain electrode that are disposed over the electron supply layer.

摘要翻译： 半导体器件包括设置在衬底上的缓冲层，设置在缓冲层上的高电阻层，高电阻层掺杂有用于实现高电阻的过渡金属，低电阻区是 设置在高电阻层的一部分上或高电阻层的一部分上，低电阻区域掺杂有用于实现低电阻的杂质元素，设置在包含低电阻的高电阻层上的电子迁移层 设置在电子行进层上的电子供给层，设置在电子供给层上的栅电极以及设置在电子供给层上的源电极和漏电极。

公开(公告)号：US08633494B2

公开(公告)日：2014-01-21

申请号：US13552894

申请日：2012-07-19

申请人： Masato Nishimori ,  Toshihide Kikkawa

发明人： Masato Nishimori ,  Toshihide Kikkawa

IPC分类号： H01L31/0256 ,  H01L21/338

CPC分类号： H01L29/1075 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： A semiconductor device includes a buffer layer that is disposed over a substrate, a high-resistance layer that is disposed over the buffer layer, the high-resistance layer being doped with a transition metal for achieving high resistance, a low-resistance region that is disposed in a portion of the high-resistance layer or over the high-resistance layer, the low-resistance region being doped with an impurity element for achieving low resistance, an electron travel layer that is disposed over the high-resistance layer including the low-resistance region, an electron supply layer that is disposed over the electron travel layer, a gate electrode that is disposed over the electron supply layer, and a source electrode and a drain electrode that are disposed over the electron supply layer.

摘要翻译： 半导体器件包括设置在衬底上的缓冲层，设置在缓冲层上的高电阻层，高电阻层掺杂有用于实现高电阻的过渡金属，低电阻区是 设置在高电阻层的一部分上或高电阻层的一部分上，低电阻区域掺杂有用于实现低电阻的杂质元素，设置在包含低电阻的高电阻层上的电子迁移层 设置在电子行进层上的电子供给层，设置在电子供给层上的栅电极以及设置在电子供给层上的源电极和漏电极。

公开(公告)号：US08507949B2

公开(公告)日：2013-08-13

申请号：US13195190

申请日：2011-08-01

申请人： Masato Nishimori ,  Atsushi Yamada

发明人： Masato Nishimori ,  Atsushi Yamada

IPC分类号： H01L29/66

CPC分类号： H01L29/66431 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7787

摘要： A semiconductor device includes a substrate, a carrier transit layer disposed above the substrate, a compound semiconductor layer disposed on the carrier transit layer, a source electrode disposed on the compound semiconductor layer, a first groove disposed from the back of the substrate up to the inside of the carrier transit layer while penetrating the substrate, a drain electrode disposed in the inside of the first groove, a gate electrode located between the source electrode and the first groove and disposed on the compound semiconductor layer, and a second groove located diagonally under the source electrode and between the source electrode and the first groove and disposed from the back of the substrate up to the inside of the carrier transit layer while penetrating the substrate.

摘要翻译： 半导体器件包括衬底，设置在衬底上的载流子迁移层，设置在载流子迁移层上的化合物半导体层，设置在化合物半导体层上的源电极，从衬底的背面设置到第一沟槽 在穿过基板的载体转移层的内部，设置在第一槽的内部的漏电极，位于源电极和第一槽之间并设置在化合物半导体层上的栅极，以及位于对角线下方的第二槽 源电极和源电极与第一沟槽之间，并且在穿透衬底的同时从衬底的背面直到载体转运层的内部布置。