发明申请
- 专利标题： FABRICATING METHOD OF SEMICONDUCTOR ELEMENT
- 专利标题（中）： 半导体元件的制作方法
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申请号： US13283690申请日： 2011-10-28
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公开(公告)号： US20130109163A1公开(公告)日： 2013-05-02
- 发明人: Ming-Te WEI , Po-Chao Tsao , Ming-Tsung Chen
- 申请人： Ming-Te WEI , Po-Chao Tsao , Ming-Tsung Chen
- 申请人地址： TW HSINCHU
- 专利权人： UNITED MICROELECTRONICS CORPORATION
- 当前专利权人： UNITED MICROELECTRONICS CORPORATION
- 当前专利权人地址： TW HSINCHU
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
The present invention relates to a fabricating method of a semiconductor element. First, a substrate is provided and a first layout structure having a first width is formed on the substrate. Then, an etching mask is formed to cover the first layout structure, and the etching mask exposes a portion of the first layout structure. After that, the first layout structure is etched with the etching mask to form a second layout structure having a second width. The second width is less than the first width. This fabricating method is capable of finishing the fabrication of gate structures in two different directions. Accordingly, the layout flexibility is improved.
公开/授权文献
- US08575034B2 Fabricating method of semiconductor element 公开/授权日：2013-11-05
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