发明申请
- 专利标题: SIGE HBT AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): SIGT HBT及其制造方法
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申请号: US13613236申请日: 2012-09-13
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公开(公告)号: US20130113020A1公开(公告)日: 2013-05-09
- 发明人: Donghua Liu , Wenting Duan , Wensheng Qian , Jun Hu , Jing Shi
- 申请人: Donghua Liu , Wenting Duan , Wensheng Qian , Jun Hu , Jing Shi
- 申请人地址: CN Shanghai
- 专利权人: SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- 当前专利权人: SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- 当前专利权人地址: CN Shanghai
- 优先权: CN201110342684.X 20111103
- 主分类号: H01L29/737
- IPC分类号: H01L29/737 ; H01L21/331
摘要:
A SiGe HBT is disclosed, which includes: a silicon substrate; shallow trench field oxides formed in the silicon substrate; a pseudo buried layer formed at bottom of each shallow trench field oxide; a collector region formed beneath the surface of the silicon substrate, the collector region being sandwiched between the shallow trench field oxides and between the pseudo buried layers; a polysilicon gate formed above each shallow trench field oxide having a thickness of greater than 150 nm; a base region on the polysilicon gates and the collector region; emitter region isolation oxides on the base region; and an emitter region on the emitter region isolation oxides and a part of the base region. The polysilicon gate is formed by gate polysilicon process of a MOSFET in a CMOS process. A method of manufacturing the SiGe HBT is also disclosed.
公开/授权文献
- US09012279B2 SiGe HBT and method of manufacturing the same 公开/授权日:2015-04-21