发明申请
- 专利标题： METHOD FOR METAL CORRELATED VIA SPLIT FOR DOUBLE PATTERNING
- 专利标题（中）： 金属相关方法，用于双重方式分割
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申请号： US13743087申请日： 2013-01-16
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公开(公告)号： US20130130410A1公开(公告)日： 2013-05-23
- 发明人: Burn Jeng LIN , Tsai-Sheng GAU , Ru-Gun LIU , Wen-Chun HUANG
- 申请人： Burn Jeng LIN , Tsai-Sheng GAU , Ru-Gun LIU , Wen-Chun HUANG
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/66
- IPC分类号： H01L21/66
摘要：
A method of via patterning mask assignment for a via layer using double patterning technology, the method includes determining, using a processor, if a via of the via layer intercepts an underlying or overlaying metal structure assigned to a first metal mask. If the via intercepts the metal structure assigned to the first metal mask, assigning the via to a first via mask, wherein the first via mask aligns with the first metal mask. Otherwise, assigning the via to a second via mask, wherein the second via mask aligns with a second metal mask different from the first metal mask.
公开/授权文献
- US08762899B2 Method for metal correlated via split for double patterning 公开/授权日：2014-06-24