发明申请
- 专利标题： SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
- 专利标题（中）： 基板加工方法和基板加工装置
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申请号： US13813663申请日： 2011-08-02
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公开(公告)号： US20130130499A1公开(公告)日： 2013-05-23
- 发明人: Hajime Ugajin , Shigeki Tozawa
- 申请人： Hajime Ugajin , Shigeki Tozawa
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-174514 20100803; JP2010-284461 20101221
- 国际申请： PCT/JP2011/067670 WO 20110802
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A substrate processing method for removing an Si-based film on a surface of a substrate accommodated in a processing chamber includes a first step in which the Si-based film on the surface of the substrate is transformed into a reaction product by a gas containing a halogen element and an alkaline gas in the processing chamber and a second step in which the reaction product is vaporized in the processing chamber which is depressurized to a pressure lower than a pressure during the first step. The first step and the second step are repeated two or more times.
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