公开(公告)号：US08968475B2

公开(公告)日：2015-03-03

申请号：US13349190

申请日：2012-01-12

申请人： Masaya Odagiri ,  Shigeki Tozawa ,  Hajime Ugajin

发明人： Masaya Odagiri ,  Shigeki Tozawa ,  Hajime Ugajin

IPC分类号： C23C16/00 ,  H01L21/67

CPC分类号： H01L21/67173 ,  H01L21/67017 ,  H01L21/6719 ,  Y10T137/8593

摘要： A substrate processing apparatus, which is provided with a processing chamber configured to process a substrate and capable of being depressurized, includes a substrate placing table configured to place a substrate; a baffle plate disposed around the substrate placing table so as to divide an inside of the processing chamber into a processing space and an exhaust space; and an exhaust port configured to exhaust the inside of the processing chamber. A gap is formed between the substrate placing table and the baffle plate and a plurality of communication holes are formed in the baffle plate so that the processing space and the exhaust space communicate with each other.

摘要翻译： 一种基板处理装置，其具有：被配置为处理基板并能够减压的处理室，包括：基板放置台，其配置成放置基板; 挡板，其设置在所述基板载置台周围，以将所述处理室的内部分割成处理空间和排气空间; 以及被配置为排出处理室的内部的排气口。 在基板载置台和挡板之间形成间隙，并且在挡板中形成多个连通孔，使得处理空间和排气空间彼此连通。

公开(公告)号：US07922865B2

公开(公告)日：2011-04-12

申请号：US10362879

申请日：2001-08-28

申请人： Koji Miyata ,  Jun Hirose ,  Akira Kodashima ,  Shigeki Tozawa ,  Kazuhiro Kubota ,  Yuki Chiba

发明人： Koji Miyata ,  Jun Hirose ,  Akira Kodashima ,  Shigeki Tozawa ,  Kazuhiro Kubota ,  Yuki Chiba

IPC分类号： H01L21/306

CPC分类号： H01J37/3266 ,  H01J37/3408

摘要： In a magnetic field generator for magnetron plasma generation which comprises a dipole-ring magnet with a plurality of columnar anisotropic segment magnets arranged in a ring-like manner, or in an etching apparatus and a method both of which utilize the magnetic field generator, the uniformity of plasma treatment over the entire surface of a wafer (workpiece) is improved by controlling the direction of the magnetic field relative to the working surface of the wafer (workpiece) which is subject to plasma treatment such as etching.

摘要翻译： 在用于磁控管等离子体生成的磁场发生器中，其包括具有以环状布置的多个柱状各向异性区段磁体的偶极环磁体，或者在利用磁场发生器的蚀刻装置和方法中， 通过控制相对于进行诸如蚀刻等离子体处理的晶片（工件）的工作表面的磁场方向来改善晶片（工件）整个表面上的等离子体处理的均匀性。

公开(公告)号：US20110035957A1

公开(公告)日：2011-02-17

申请号：US12439960

申请日：2007-12-20

申请人： Yusuke Muraki ,  Shigeki Tozawa

发明人： Yusuke Muraki ,  Shigeki Tozawa

IPC分类号： F26B25/00

CPC分类号： H01L21/31116 ,  H01L21/02057 ,  H01L21/67173 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67748

摘要： A gas processing apparatus includes a chamber 40 configured to accommodate a wafer W; a transfer mechanism 17 configured to continuously transfer a plurality of wafers W one by one into the chamber 40; a gas supply mechanism configured to supply into the chamber 40 a process gas having a clinging property and prepared for performing a gas process on each of the wafers W; and a control section 90 preset to control the gas supply mechanism and the transfer mechanism to supply the process gas into the chamber before transferring a first target object into the chamber, and then to transfer the first target object into the chamber after the elapse of a predetermined time.

摘要翻译： 气体处理装置包括：构造成容纳晶片W的室40; 传送机构17，被配置为将多个晶片W一个一个地连续地传送到室40中; 气体供给机构，其构造成向所述室40供给具有附着性并且准备用于对所述晶片W进行气体处理的处理气体; 以及控制部90，用于控制气体供给机构和传送机构，以在将第一目标物体转移到室内之前将处理气体供给到室中，然后在经过了第一目标物体之后将第一目标物体转移到室中 预定时间

公开(公告)号：US20100216296A1

公开(公告)日：2010-08-26

申请号：US12084132

申请日：2006-10-20

申请人： Yusuke Muraki ,  Shigeki Tozawa ,  Takehiko Orii

发明人： Yusuke Muraki ,  Shigeki Tozawa ,  Takehiko Orii

IPC分类号： H01L21/20 ,  H01L21/306

CPC分类号： H01L29/165 ,  H01L21/02057 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： [Object] To provide a processing method capable of removing an oxide film adhering on a Si layer from the Si layer without adversely affecting parts other than the oxide film and capable of surely forming a SiGe layer with good film quality without roughening the crystal structure of a surface of the Si layer from which the oxide film has been removed, and to provide a recording medium.[Means for Solving the Problems] A processing method for removing an oxide film growing on a surface of a Si layer, and forming a SiGe layer on the surface of the exposed Si layer includes: supplying gas containing a halogen element and basic gas to the surface of the Si layer, and causing the oxide film growing on the surface of the Si layer to chemically react with the gas containing the halogen element and the basic gas to turn the oxide film into a reaction product; removing the reaction product by heating; and thereafter forming the SiGe layer on the surface of the exposed Si layer.

摘要翻译： 本发明提供一种能够从Si层除去附着在Si层上的氧化膜的处理方法，而不会不利地影响氧化膜以外的部分，并且能够确保形成具有良好膜质量的SiGe层，而不会使晶体结构变粗糙 已经除去氧化膜的Si层的表面，并提供记录介质。 解决问题的手段用于去除在Si层表面生长的氧化膜并在暴露的Si层的表面上形成SiGe层的处理方法包括：将含有卤素元素和碱性气体的气体供给到 使Si层表面生长的氧化膜与含有卤素元素和碱性气体的气体发生化学反应，将氧化膜转化成反应产物; 通过加热除去反应产物; 然后在暴露的Si层的表面上形成SiGe层。

公开(公告)号：US20080254636A1

公开(公告)日：2008-10-16

申请号：US12078958

申请日：2008-04-08

申请人： Shigeki Tozawa ,  Yusuke Muraki

发明人： Shigeki Tozawa ,  Yusuke Muraki

IPC分类号： H01L21/306

CPC分类号： H01L21/31138 ,  H01L21/67069 ,  H01L21/67155

摘要： An etching method includes preparing a target object such that a first oxide film made of silicon oxide containing at least one of B and P is formed on a substrate, a second oxide film made of silicon oxide containing neither of B and P is formed on the first oxide film, and a contact portion is present below an interface between the first oxide film and the second oxide film. The etching method further includes etching the second oxide film and the first oxide film, thereby forming a hole reaching the contact portion, and etching the first oxide film by a dry process using a gas containing HF, thereby expanding a portion of the hole adjacent to an upper side of the contact portion and inside the first oxide film.

摘要翻译： 蚀刻方法包括制备目标物体，使得在基板上形成由含有B和P中的至少一个的氧化硅制成的第一氧化物膜，在不含有B和P的氧化硅中形成的第二氧化物膜形成在 第一氧化物膜和接触部分存在于第一氧化物膜和第二氧化物膜之间的界面之下。 蚀刻方法还包括蚀刻第二氧化物膜和第一氧化物膜，从而形成到达接触部分的孔，并且通过使用含有HF的气体的干法来蚀刻第一氧化物膜，从而使孔的一部分与 接触部分的上侧和第一氧化膜内部。

公开(公告)号：US5779803A

公开(公告)日：1998-07-14

申请号：US696224

申请日：1996-08-13

申请人： Yoichi Kurono ,  Shigeki Tozawa ,  Shozo Hosoda

发明人： Yoichi Kurono ,  Shigeki Tozawa ,  Shozo Hosoda

IPC分类号： H01J37/32 ,  C23C16/00

CPC分类号： H01J37/32623 ,  H01J37/32633

摘要： An apparatus for subjecting a semiconductor wafer having an uncovered marginal portion, from which a photoresist film is removed, to an anisotropic etching. The apparatus comprises a process chamber which can be set to a vacuum. Upper and lower electrodes opposite to each other are provided in the process chamber. An etching gas is made into plasma between these electrodes. An electrostatic chuck is arranged on the lower electrode. A wafer is mounted on the electrostatic chuck. A ring made of dielectric material, movable upward and downward, is arranged between the electrodes. A central portion of the ring is formed as a hood having a recessed shape corresponding to the marginal portion of the wafer. During the etching, the hood covers the marginal portion of the wafer under a plasma sheath, so as to be out of contact with the wafer, thereby preventing the marginal portion of the wafer from being etched.

摘要翻译： 一种用于对具有未被覆盖的边缘部分的半导体晶片（其中除去光致抗蚀剂膜）进行各向异性蚀刻的设备。 该装置包括可设置为真空的处理室。 在处理室中设置彼此相对的上下电极。 蚀刻气体在这些电极之间被制成等离子体。 下电极上设有静电吸盘。 将晶片安装在静电卡盘上。 由电介质材料制成的可上下移动的环设置在电极之间。 环的中心部分形成为具有对应于晶片的边缘部分的凹形的罩。 在蚀刻期间，罩覆盖等离子体护套下的晶片的边缘部分，以便与晶片脱离接触，从而防止晶片的边缘部分被蚀刻。

公开(公告)号：US5445709A

公开(公告)日：1995-08-29

申请号：US154566

申请日：1993-11-19

申请人： Masayuki Kojima ,  Yoshikazu Ito ,  Kazuhsi Tomita ,  Shigeki Tozawa ,  Shunichi Iimuro ,  Masashi Arasawa ,  Eiichi Nishimura

发明人： Masayuki Kojima ,  Yoshikazu Ito ,  Kazuhsi Tomita ,  Shigeki Tozawa ,  Shunichi Iimuro ,  Masashi Arasawa ,  Eiichi Nishimura

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/06

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32724 ,  H01J2237/3345

摘要： A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for. The diameter of the effective electrode portion is selected to be larger than the size of a wafer by 5 to 35% such that a taper angle of a side wall to be etched formed by etching is set to be 85.degree. to 90.degree..

摘要翻译： 平行板等离子体蚀刻装置包括布置在处理室中的基座电极和淋浴电极。 将半导体晶片放置在基座电极上。 在淋浴电极中形成由多个处理气体供给孔限定的淋浴区域。 淋浴电极被冷却块冷却，使淋浴电极的有效电极部分具有温度梯度，使得有效电极部分的中心部分的温度低于有效电极周边部分的温度 一部分。 淋浴区域的直径被选择为小于晶片的直径5至25％，使得由有效电极部分的温度梯度引起的晶片上的蚀刻各向异性程度的平面均匀度的降低被补偿 。 选择有效电极部分的直径大于晶片的尺寸5至35％，使得通过蚀刻形成的待蚀刻侧壁的锥角设定为85°至90°。

公开(公告)号：US20130130499A1

公开(公告)日：2013-05-23

申请号：US13813663

申请日：2011-08-02

申请人： Hajime Ugajin ,  Shigeki Tozawa

发明人： Hajime Ugajin ,  Shigeki Tozawa

IPC分类号： H01L21/302

CPC分类号： H01L21/302 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/67745 ,  H01L21/76224 ,  H01L21/76283 ,  H01L27/11521 ,  H01L29/66825 ,  H01L29/66833

摘要： A substrate processing method for removing an Si-based film on a surface of a substrate accommodated in a processing chamber includes a first step in which the Si-based film on the surface of the substrate is transformed into a reaction product by a gas containing a halogen element and an alkaline gas in the processing chamber and a second step in which the reaction product is vaporized in the processing chamber which is depressurized to a pressure lower than a pressure during the first step. The first step and the second step are repeated two or more times.

摘要翻译： 用于在容纳在处理室中的基板的表面上除去Si基膜的基板处理方法包括第一步骤，其中基板表面上的Si基膜通过含有 卤素元素和碱性气体，第二步骤，其中反应产物在处理室中蒸发，该处理室被减压到比第一步骤期间的压力低的压力。 第一步和第二步重复两次或更多次。

公开(公告)号：US20090242129A1

公开(公告)日：2009-10-01

申请号：US12409664

申请日：2009-03-24

申请人： Tadashi Onishi ,  Shigeki Tozawa ,  Yusuke Muraki ,  Takafumi Nitoh

发明人： Tadashi Onishi ,  Shigeki Tozawa ,  Yusuke Muraki ,  Takafumi Nitoh

IPC分类号： B44C1/22 ,  C23C16/46

CPC分类号： H01L21/67069 ,  H01L21/31116 ,  H01L21/67109

摘要： A heat treatment apparatus for heat-treating a silicon substrate includes a mounting table for mounting and heating the silicon substrate thereon, wherein a cover made of any of silicon, silicon carbide, and aluminum nitride is placed on an upper surface of the mounting table. By covering the upper surface of the mounting table by the cover made of silicon or the like, metal contamination of the lower surface of the silicon substrate is suppressed.

摘要翻译： 用于热处理硅衬底的热处理设备包括用于在其上安装和加热硅衬底的安装台，其中由硅，碳化硅和氮化铝中的任何一个制成的盖子被放置在安装台的上表面上。 通过用硅等覆盖安装台的上表面，抑制了硅衬底的下表面的金属污染。

公开(公告)号：US5766498A

公开(公告)日：1998-06-16

申请号：US623737

申请日：1996-03-29

申请人： Masayuki Kojima ,  Yoshikazu Ito ,  Kazushi Tomita ,  Shigeki Tozawa ,  Shunichi Iimuro ,  Masashi Arasawa ,  Eiichi Nishimura

发明人： Masayuki Kojima ,  Yoshikazu Ito ,  Kazushi Tomita ,  Shigeki Tozawa ,  Shunichi Iimuro ,  Masashi Arasawa ,  Eiichi Nishimura

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32724 ,  H01J2237/3345

摘要： A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for. The diameter of the effective electrode portion is selected to be larger than the size of a wafer by 5 to 35% such that a taper angle of a side wall to be etched formed by etching is set to be 85.degree. to 90.degree..