Invention Application
- Patent Title: THIN FILM OF COPPER-NICKEL-MOLYBDENUM ALLOY AND METHOD FOR MANUFACTURING THE SAME
- Patent Title (中): 铜 - 钼 - 钼合金薄膜及其制造方法
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Application No.: US13751142Application Date: 2013-01-27
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Publication No.: US20130136650A1Publication Date: 2013-05-30
- Inventor: Xiaona LI , Xinyi ZHANG , Jin ZHU , Qing WANG , Chuang DONG
- Applicant: Dalian University Of Technology
- Applicant Address: CN Dalian
- Assignee: DALIAN UNIVERSITY OF TECHNOLOGY
- Current Assignee: DALIAN UNIVERSITY OF TECHNOLOGY
- Current Assignee Address: CN Dalian
- Main IPC: C22C9/00
- IPC: C22C9/00 ; C23C14/18
Abstract:
A Cu—Ni—Mo alloy thin film, including Ni as a solution element and Mo as a diffusion barrier element. Ni and Mo are co-doped with Cu. The enthalpy of mixing between Mo and Cu is +19 kJ/mol, and the enthalpy of mixing between Mo and Ni is −7 kJ/mol. The atomic fraction of Mo/Ni is within the range of 0.06-0.20 or the weight faction of Mo/Ni within the range of 0.10-0.33. The total amount of Ni and Mo additions is within the range of 0.14-1.02 at. % or wt. %. A method for manufacturing the alloy thin film is also provided.
Public/Granted literature
- US09023271B2 Thin film of copper—nickel—molybdenum alloy and method for manufacturing the same Public/Granted day:2015-05-05
Information query
