公开(公告)号：US20130136650A1

公开(公告)日：2013-05-30

申请号：US13751142

申请日：2013-01-27

Applicant: Dalian University Of Technology

Inventor： Xiaona LI ,  Xinyi ZHANG ,  Jin ZHU ,  Qing WANG ,  Chuang DONG

IPC: C22C9/00 ,  C23C14/18

CPC classification number: C22C9/00 ,  C22C9/06 ,  C23C14/165 ,  C23C14/185 ,  C23C14/5806

Abstract: A Cu—Ni—Mo alloy thin film, including Ni as a solution element and Mo as a diffusion barrier element. Ni and Mo are co-doped with Cu. The enthalpy of mixing between Mo and Cu is +19 kJ/mol, and the enthalpy of mixing between Mo and Ni is −7 kJ/mol. The atomic fraction of Mo/Ni is within the range of 0.06-0.20 or the weight faction of Mo/Ni within the range of 0.10-0.33. The total amount of Ni and Mo additions is within the range of 0.14-1.02 at. % or wt. %. A method for manufacturing the alloy thin film is also provided.

Abstract translation: Cu-Ni-Mo合金薄膜，其包括Ni作为溶液元素，Mo作为扩散阻挡元件。 Ni和Mo与Cu共掺杂。 Mo和Cu之间的混合焓为+ 19 kJ / mol，Mo和Ni之间的混合焓为-7 kJ / mol。 Mo / Ni的原子分数在0.06-0.20的范围内，Mo / Ni的重量分数在0.10-0.33的范围内。 Ni和Mo添加量的总量在0.14-1.02英寸的范围内。 ％或wt。 ％。 还提供了一种制造合金薄膜的方法。