发明申请
- 专利标题： UNDER-FILL MATERIAL AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
- 专利标题（中）： 下填充材料和制造半导体器件的方法
-
申请号： US13686841申请日： 2012-11-27
-
公开(公告)号： US20130137218A1公开(公告)日： 2013-05-30
- 发明人: Kosuke Morita , Naohide Takamoto , Hiroyuki Senzai
- 申请人： NITTO DENKO CORPORATION
- 申请人地址： JP Osaka
- 专利权人： NITTO DENKO CORPORATION
- 当前专利权人： NITTO DENKO CORPORATION
- 当前专利权人地址： JP Osaka
- 优先权： JP2011-259122 20111128; JP2012-049333 20120306; JP2012-119767 20120525
- 主分类号： C08L33/00
- IPC分类号： C08L33/00 ; H01L21/78
摘要：
The present invention provides an under-fill material with which a semiconductor device having a high connection reliability can be provided while securing a usable material by reducing a difference in thermal-responsive behavior between a semiconductor element and an adherend, and a method for producing a semiconductor device using the under-fill material. In the under-fill material of the present invention, a storage elastic modulus E′ [MPa] and a thermal expansion coefficient α [ppm/K] after carrying out a heat-curing treatment at 175° C. for an hour satisfy the following formula (1) at 25° C.: E′×α
公开/授权文献
信息查询
