公开(公告)号：US20170033076A1

公开(公告)日：2017-02-02

申请号：US15106439

申请日：2014-12-22

申请人： NITTO DENKO CORPORATION

发明人： Kosuke Morita ,  Tsuyoshi Ishizaka ,  Jun Ishii ,  Goji Shiga ,  Chie Iino

IPC分类号： H01L23/00 ,  H01L21/52 ,  H01L25/00 ,  H01L21/78

CPC分类号： H01L24/83 ,  H01L21/52 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/78 ,  H01L21/7806 ,  H01L23/12 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16146 ,  H01L2224/19 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/73259 ,  H01L2224/81005 ,  H01L2224/83091 ,  H01L2224/83097 ,  H01L2224/83203 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/0002 ,  H01L2924/15174 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2224/83005

摘要： Provided is a production method for a semiconductor package making it possible to embed, in its irregularities, a thermosetting resin sheet satisfactorily. The method is a production method, for a semiconductor package, including the step of forming a sealed body by pressurizing a stacked body which includes: a chip-temporarily-fixed body comprising a supporting plate, a temporarily-fixing material stacked over the supporting plate, and a semiconductor chip fixed temporarily over the temporarily-fixing material; a thermosetting resin sheet arranged over the chip-temporarily-fixed body; and a separator having a tensile storage elastic modulus of 200 MPa or less at 90° C. and arranged over the thermosetting resin sheet; the sealed body including the semiconductor chip and the thermosetting resin sheet covering the semiconductor chip.

摘要翻译： 提供一种半导体封装的制造方法，其可以令人满意地嵌入其不规则的热固性树脂片。 该方法是一种用于半导体封装的制造方法，其包括通过对叠层体进行加压而形成密封体的步骤，所述堆叠体包括：芯片临时固定体，包括支撑板，叠置在支撑板上的临时固定材料 以及临时固定在临时固定材料上的半导体芯片; 布置在所述芯片临时固定体上的热固性树脂片; 以及在90℃下的拉伸储存弹性模量为200MPa以下并且配置在所述热固性树脂片上的隔膜; 所述密封体包括半导体芯片和覆盖半导体芯片的热固性树脂片。

公开(公告)号：US20160056123A1

公开(公告)日：2016-02-25

申请号：US14779511

申请日：2014-03-19

申请人： NITTO DENKO CORPORATION

发明人： Kosuke Morita ,  Naohide Takamoto

IPC分类号： H01L23/00 ,  B32B27/36 ,  B32B7/12

CPC分类号： H01L24/83 ,  B32B5/02 ,  B32B5/24 ,  B32B7/06 ,  B32B7/12 ,  B32B9/005 ,  B32B9/04 ,  B32B9/045 ,  B32B15/04 ,  B32B15/08 ,  B32B23/08 ,  B32B27/08 ,  B32B27/10 ,  B32B27/12 ,  B32B27/16 ,  B32B27/18 ,  B32B27/20 ,  B32B27/281 ,  B32B27/283 ,  B32B27/286 ,  B32B27/304 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/322 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B27/38 ,  B32B27/40 ,  B32B29/002 ,  B32B29/005 ,  B32B29/02 ,  B32B29/06 ,  B32B2255/02 ,  B32B2255/06 ,  B32B2255/10 ,  B32B2255/12 ,  B32B2255/205 ,  B32B2262/101 ,  B32B2307/50 ,  B32B2307/514 ,  B32B2307/748 ,  B32B2405/00 ,  B32B2457/00 ,  B32B2457/08 ,  H01L21/563 ,  H01L23/295 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/27334 ,  H01L2224/2744 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/29393 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/81204 ,  H01L2224/81815 ,  H01L2224/8185 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83204 ,  H01L2224/83862 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/83948 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/01006 ,  H01L2924/05442 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/066 ,  H01L2924/095

摘要： Provided are a sealing sheet capable of suppressing generation of voids due to satisfactory embeddability in irregularities of a semiconductor element or an adherend and with satisfactory workability before and after the sealing sheet is bonded to the adherend; a method for producing a semiconductor device using the sealing sheet; and a substrate with the sealing sheet bonded thereto. The sealing sheet includes a base material, and an under-fill material provided thereon having the following characteristics: a 90° peel strength from the base material of 1 mN/20 mm or more and 50 mN/20 mm or less; a rupture elongation of 10% or more at 25° C.; a minimum viscosity of 20,000 Pa·s or less at a temperature of 40° C. or more and 100° C. or less; and a minimum viscosity of 100 Pa·s or more at a temperature of 100° C. or more and 200° C. or less.

摘要翻译： 提供一种能够抑制由于在半导体元件或被粘物的凹凸中的令人满意的嵌入性而产生空隙的密封片，并且在密封片粘合到被粘物之前和之后具有令人满意的加工性; 一种使用密封片制造半导体器件的方法; 以及与该密封片接合的基板。 密封片包括基材和其上提供的填充材料，具有以下特征：基材的90°剥离强度为1mN / 20mm以上且50mN / 20mm以下; 在25℃下的断裂伸长率为10％以上。 在40℃以上且100℃以下的温度下的最低粘度为20000Pa·s以下; 并且在100℃以上且200℃以下的温度下的最小粘度为100Pa·s以上。

公开(公告)号：US20160042986A1

公开(公告)日：2016-02-11

申请号：US14775445

申请日：2014-03-12

申请人： NITTO DENKO CORPORATION

发明人： Naohide Takamoto ,  Kosuke Morita ,  Hiroyuki Senzai

IPC分类号： H01L21/683 ,  B32B27/08 ,  B32B7/12 ,  H01L23/00

CPC分类号： H01L21/6836 ,  B32B5/02 ,  B32B5/26 ,  B32B7/12 ,  B32B15/08 ,  B32B25/06 ,  B32B25/08 ,  B32B25/10 ,  B32B25/12 ,  B32B25/14 ,  B32B27/08 ,  B32B27/10 ,  B32B27/12 ,  B32B27/20 ,  B32B27/22 ,  B32B27/281 ,  B32B27/283 ,  B32B27/285 ,  B32B27/288 ,  B32B27/304 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B27/38 ,  B32B27/40 ,  B32B27/42 ,  B32B29/005 ,  B32B2255/02 ,  B32B2255/10 ,  B32B2255/12 ,  B32B2255/20 ,  B32B2255/205 ,  B32B2262/0269 ,  B32B2262/101 ,  B32B2307/50 ,  B32B2307/514 ,  B32B2307/558 ,  B32B2457/00 ,  B32B2457/14 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L24/13 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L24/97 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/81191 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Provided are a reinforcing sheet which is capable of forming a secondary mounted semiconductor device excellent in impact resistance and which is capable of enhancing efficiency of a secondary mounting process; and a method for producing a secondary mounted semiconductor device using the reinforcing sheet. The present invention provides a reinforcing sheet for reinforcing a secondary mounted semiconductor device in which a primary mounted semiconductor device with a bump electrode formed on a first main surface is electrically connected to a wiring substrate through the bump electrode, wherein the reinforcing sheet includes a base material layer, a pressure-sensitive adhesive layer, and a thermosetting resin layer in this order, and the pressure-sensitive adhesive layer has a breaking strength of 0.07 MPa or more, and a melt viscosity of 4000 Pa·s or less at 60 to 100° C.

摘要翻译： 本发明提供能够形成耐冲击性优异的二次安装半导体装置的增强片，能够提高二次安装工序的效率。 以及使用该增强片的二次安装半导体器件的制造方法。 本发明提供了一种用于加强二次安装的半导体器件的加强片，其中具有形成在第一主表面上的凸起电极的初级安装半导体器件通过凸块电极与布线基板电连接，其中加强片包括基底 材料层，压敏粘合剂层和热固性树脂层，并且压敏粘合剂层的断裂强度为0.07MPa以上，熔融粘度在60Pa以下为4000Pa·s以下 100°C

公开(公告)号：US20160013089A1

公开(公告)日：2016-01-14

申请号：US14772724

申请日：2014-02-28

申请人： NITTO DENKO CORPORATION

发明人： Naohide Takamoto ,  Kosuke Morita ,  Akihiro Fukui ,  Hiroyuki Hanazono ,  Akira Suzuki

IPC分类号： H01L21/683 ,  B32B27/08 ,  C08J5/18 ,  H01L21/78

CPC分类号： H01L21/6836 ,  B32B27/08 ,  B32B2270/00 ,  B32B2405/00 ,  B32B2457/14 ,  C08J5/18 ,  C08J2333/08 ,  C08J2333/12 ,  C08J2461/06 ,  C08J2463/00 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/293 ,  H01L23/295 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/68368 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29387 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83191 ,  H01L2224/83862 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2924/05442 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83

摘要： A production method for a semiconductor device is provided whereby, when peeling a support body from an attached wafer, melting of a sheet-shaped resin composition pasted to the other surface of the wafer can be suppressed. The method comprises: preparing a support body-attached wafer, said support body-attached wafer having the support body bonded, via a temporary fixing layer, to one surface of the wafer having a through electrode formed therein; preparing a dicing tape-integrated sheet-shaped resin composition having a sheet-shaped resin composition having an external shape smaller than the other surface of the wafer formed upon a dicing tape; pasting the other surface of the support body-attached wafer to the sheet-shaped resin composition in the dicing tape-integrated sheet-shaped resin composition; and melting the temporary fixing layer by a solvent and peeling the support body away from the wafer.

摘要翻译： 提供一种用于半导体器件的制造方法，其中当从附着的晶片剥离支撑体时，可以抑制粘贴到晶片的另一个表面上的片状树脂组合物的熔化。 该方法包括：准备附着有支撑体的晶片，所述支撑体附着晶片具有通过临时固定层与支撑体结合在其中形成有通孔的晶片的一个表面上; 制备具有小于形成在切割带上的晶片的另一表面的外形的片状树脂组合物的切割带一体的片状树脂组合物; 将附着有支撑体的晶片的另一个表面粘贴在切割带一体的片状树脂组合物中的片状树脂组合物上; 并通过溶剂熔化临时固定层，并将支撑体剥离晶片。

公开(公告)号：US20150380277A1

公开(公告)日：2015-12-31

申请号：US14769441

申请日：2014-02-07

申请人： NITTO DENKO CORPORATION

发明人： Kosuke Morita ,  Naohide Takamoto ,  Hiroyuki Hanazono ,  Akihiro Fukui

IPC分类号： H01L21/56 ,  C08J5/18 ,  H01L23/00 ,  B32B27/38 ,  H01L21/683 ,  H01L23/29

CPC分类号： H01L21/563 ,  B32B27/38 ,  B32B2264/102 ,  B32B2457/14 ,  C08G59/621 ,  C08J5/18 ,  C08J2333/08 ,  C08J2333/12 ,  C08J2361/10 ,  C08J2433/08 ,  C08J2433/12 ,  C08J2433/20 ,  C08J2463/00 ,  C08L33/06 ,  C09J133/08 ,  C09J163/00 ,  H01L21/6836 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/562 ,  H01L24/13 ,  H01L24/14 ,  H01L24/27 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16225 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/84862 ,  H01L2924/00011 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/0105 ,  H01L2924/0665 ,  H01L2924/066 ,  H01L2924/00 ,  H01L2224/81805

摘要： An object of the present invention is to provide an underfill sheet that enables suitable filling of unevenness of a circuit surface of a semiconductor element, a suitable connection of a terminal of the semiconductor element and a terminal of an adherend, and suppression of outgas. The present invention relates to the underfill sheet having a viscosity of 1,000 Pa·s to 10,000 Pa·s at 150° C. and 0.05 to 0.20 rotations/min; and a minimum viscosity of 100 Pa·s or more at 100 to 200° C. and 0.3 to 0.7 rotations/min.

摘要翻译： 本发明的目的是提供一种能够适当地填充半导体元件的电路表面的不均匀性，半导体元件的端子和被粘物的端子的适当连接以及抑制排气的底部填充片。 本发明涉及在150℃下粘度为1,000Pa·s〜10,000Pa·s和0.05〜0.20转/分钟的底填料片; 在100〜200℃，最低粘度为100Pa·s以上，0.3〜0.7转/分钟。

公开(公告)号：US20130137218A1

公开(公告)日：2013-05-30

申请号：US13686841

申请日：2012-11-27

申请人： NITTO DENKO CORPORATION

发明人： Kosuke Morita ,  Naohide Takamoto ,  Hiroyuki Senzai

IPC分类号： C08L33/00 ,  H01L21/78

CPC分类号： H01L23/293 ,  C08K5/09 ,  C08K5/092 ,  C08K5/18 ,  C08K5/32 ,  C08L33/00 ,  C08L33/10 ,  C08L2203/206 ,  C09D133/10 ,  C09J165/02 ,  H01L21/563 ,  H01L21/78 ,  H01L23/18 ,  H01L23/3737 ,  H01L2224/14181 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/83191 ,  Y10T428/31511 ,  Y10T428/31938 ,  C08L61/06 ,  C08L63/00 ,  H01L2924/00012

摘要： The present invention provides an under-fill material with which a semiconductor device having a high connection reliability can be provided while securing a usable material by reducing a difference in thermal-responsive behavior between a semiconductor element and an adherend, and a method for producing a semiconductor device using the under-fill material. In the under-fill material of the present invention, a storage elastic modulus E′ [MPa] and a thermal expansion coefficient α [ppm/K] after carrying out a heat-curing treatment at 175° C. for an hour satisfy the following formula (1) at 25° C.: E′×α

摘要翻译： 本发明提供一种填充材料，通过减少半导体元件和被粘物之间的热响应特性的差异来确保可用材料，可以提供具有高连接可靠性的半导体器件，以及制造方法 半导体器件使用填充不足的材料。 在本发明的填充不足的材料中，在175℃下进行1小时的热固化处理后的储能弹性模量E'[MPa]和热膨胀系数α[ppm / K]满足以下 式（1）在25℃下：E'×α<250000 [Pa / K]（1）

公开(公告)号：US11891506B2

公开(公告)日：2024-02-06

申请号：US16767844

申请日：2018-11-29

申请人： NITTO DENKO CORPORATION

发明人： Kosuke Morita ,  Kazuhiro Kitayama

IPC分类号： C08L63/04 ,  C09K3/10 ,  C08G75/14 ,  C08G59/06 ,  C08G59/38

CPC分类号： C08L63/04 ,  C09K3/1012 ,  C08G59/066 ,  C08G59/38 ,  C08G75/14

摘要： Provided is a sealant sheet formed as a sheet. The sealant sheet comprises an epoxy group-containing polysulfide. The epoxy group-containing polysulfide has a disulfide structure and an epoxy group in its molecule.

公开(公告)号：US09754894B2

公开(公告)日：2017-09-05

申请号：US14908687

申请日：2014-06-30

申请人： NITTO DENKO CORPORATION

发明人： Chie Iino ,  Takeshi Matsumura ,  Goji Shiga ,  Kosuke Morita

IPC分类号： H01L23/28 ,  H01L23/544 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L23/31 ,  H01L21/56 ,  H01L23/29

CPC分类号： H01L23/544 ,  H01L21/561 ,  H01L23/295 ,  H01L23/3128 ,  H01L24/02 ,  H01L24/11 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/16146 ,  H01L2224/17181 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/83191 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/06582 ,  H01L2225/06593 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/0231 ,  H01L2224/11 ,  H01L2224/83 ,  H01L21/56 ,  H01L2223/544 ,  H01L21/304 ,  H01L21/78 ,  H01L2924/00014

摘要： Provided is a thermosetting sheet for sealing which is used to seal an electronic device. One surface of the sheet has a surface roughness (Ra) of 3 μm or less before the sheet is cured.

公开(公告)号：US20170032979A1

公开(公告)日：2017-02-02

申请号：US15105909

申请日：2014-12-22

申请人： NITTO DENKO CORPORATION

发明人： Kosuke Morita ,  Tsuyoshi Ishizaka ,  Jun Ishii ,  Goji Shiga ,  Chie Iino

IPC分类号： H01L21/56

CPC分类号： H01L21/561 ,  H01L21/56 ,  H01L21/568 ,  H01L23/3128 ,  H01L24/19 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16146 ,  H01L2224/19 ,  H01L2224/32145 ,  H01L2224/73259 ,  H01L2224/81005 ,  H01L2224/92224 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/0002 ,  H01L2924/15174 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2224/82 ,  H01L2224/83005

摘要： Provided is a production method for a semiconductor package which can yield a sealed resin body excellent in surface smoothness, and which makes it possible to omit any step of grinding a resin region of the sealed resin body. This method is a production method, for a semiconductor package, including the step of pressurizing a stacked body which includes: a chip-temporarily-fixed body comprising a supporting plate, a temporarily-fixing material stacked over the supporting plate, and a semiconductor chip fixed temporarily over the temporarily-fixing material; a thermosetting resin sheet arranged over the chip-temporarily-fixed body; and a separator having a tensile storage elastic modulus of 200 MPa or more at 90° C. and arranged over the thermosetting resin sheet. In this way, a sealed body is formed which includes the semiconductor chip and the thermosetting resin sheet covering the semiconductor chip.

摘要翻译： 提供一种半导体封装的制造方法，其能够得到表面平滑性优异的密封树脂体，并且能够省略对密封的树脂体的树脂区域的研磨的任何步骤。 该方法是一种用于半导体封装的制造方法，包括对堆叠体进行加压的步骤，该堆叠体包括：芯片临时固定体，包括支撑板，堆叠在支撑板上的临时固定材料，以及半导体芯片 临时固定在临时固定材料上; 布置在所述芯片临时固定体上的热固性树脂片; 以及在90℃下的拉伸储存弹性模量为200MPa以上并且配置在热固性树脂片上的隔膜。 以这种方式，形成包括半导体芯片和覆盖半导体芯片的热固性树脂片的密封体。

公开(公告)号：US08580619B2

公开(公告)日：2013-11-12

申请号：US13631286

申请日：2012-09-28

申请人： Nitto Denko Corporation

发明人： Takashi Oda ,  Kosuke Morita ,  Eiji Toyoda

IPC分类号： H01L21/00

CPC分类号： H01L21/50 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3128 ,  H01L23/544 ,  H01L24/19 ,  H01L24/20 ,  H01L24/97 ,  H01L2221/68336 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/02379 ,  H01L2224/04105 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/00

摘要： A method for producing a semiconductor device, including a semiconductor chip, for improving production efficiency and the flexibility of production design is provided. The method comprises: preparing a semiconductor chip having a first main surface on which an electroconductive member is formed; preparing a supporting structure in which, over a support configured to transmit radiation, a radiation curable pressure-sensitive adhesive layer and a first thermosetting resin layer are laminated in this order; arranging the semiconductor chips on the first thermosetting resin layer to face the first thermosetting resin layer to a second main surface of the semiconductor chips opposite to the first main surface; laminating a second thermosetting resin layer over the first thermosetting resin layer to cover the semiconductor chips; and curing the radiation curable pressure-sensitive adhesive layer by irradiating from the support side to peel the radiation curable pressure-sensitive adhesive layer from the first thermosetting resin layer.

摘要翻译： 提供一种用于制造半导体器件的方法，该半导体器件包括半导体芯片，用于提高生产效率和生产设计的灵活性。 该方法包括：制备具有形成有导电构件的第一主表面的半导体芯片; 制备其中在被配置为透射辐射的支撑件上，可辐射固化压敏粘合剂层和第一热固性树脂层按顺序层压的支撑结构; 将第一热固性树脂层上的半导体芯片布置成与第一主表面相对的半导体芯片的第二主表面面对第一热固性树脂层; 在第一热固性树脂层上层叠第二热固性树脂层以覆盖半导体芯片; 并且通过从支撑侧照射从第一热固性树脂层剥离可辐射固化压敏粘合剂层来固化可辐射固化压敏粘合剂层。