公开(公告)号：US09472439B2

公开(公告)日：2016-10-18

申请号：US14775445

申请日：2014-03-12

申请人： NITTO DENKO CORPORATION

发明人： Naohide Takamoto ,  Kosuke Morita ,  Hiroyuki Senzai

IPC分类号： H01L21/683 ,  B32B27/08 ,  H01L21/56 ,  H01L23/00 ,  B32B7/12 ,  B32B5/02 ,  B32B5/26 ,  B32B15/08 ,  B32B25/06 ,  B32B25/08 ,  B32B25/10 ,  B32B25/12 ,  B32B25/14 ,  B32B27/10 ,  B32B27/12 ,  B32B27/20 ,  B32B27/22 ,  B32B27/28 ,  B32B27/30 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B27/38 ,  B32B27/40 ,  B32B27/42 ,  B32B29/00 ,  H01L23/31

CPC分类号： H01L21/6836 ,  B32B5/02 ,  B32B5/26 ,  B32B7/12 ,  B32B15/08 ,  B32B25/06 ,  B32B25/08 ,  B32B25/10 ,  B32B25/12 ,  B32B25/14 ,  B32B27/08 ,  B32B27/10 ,  B32B27/12 ,  B32B27/20 ,  B32B27/22 ,  B32B27/281 ,  B32B27/283 ,  B32B27/285 ,  B32B27/288 ,  B32B27/304 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B27/38 ,  B32B27/40 ,  B32B27/42 ,  B32B29/005 ,  B32B2255/02 ,  B32B2255/10 ,  B32B2255/12 ,  B32B2255/20 ,  B32B2255/205 ,  B32B2262/0269 ,  B32B2262/101 ,  B32B2307/50 ,  B32B2307/514 ,  B32B2307/558 ,  B32B2457/00 ,  B32B2457/14 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L24/13 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L24/97 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/81191 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Provided are a reinforcing sheet which is capable of forming a secondary mounted semiconductor device excellent in impact resistance and which is capable of enhancing efficiency of a secondary mounting process; and a method for producing a secondary mounted semiconductor device using the reinforcing sheet. The present invention provides a reinforcing sheet for reinforcing a secondary mounted semiconductor device in which a primary mounted semiconductor device with a bump electrode formed on a first main surface is electrically connected to a wiring substrate through the bump electrode, wherein the reinforcing sheet includes a base material layer, a pressure-sensitive adhesive layer, and a thermosetting resin layer in this order, and the pressure-sensitive adhesive layer has a breaking strength of 0.07 MPa or more, and a melt viscosity of 4000 Pa·s or less at 60 to 100° C.

摘要翻译： 本发明提供能够形成耐冲击性优异的二次安装半导体装置的增强片，能够提高二次安装工序的效率。 以及使用该增强片的二次安装半导体器件的制造方法。 本发明提供了一种用于加强二次安装的半导体器件的加强片，其中具有形成在第一主表面上的凸起电极的初级安装半导体器件通过凸块电极与布线基板电连接，其中加强片包括基底 材料层，压敏粘合剂层和热固性树脂层，并且压敏粘合剂层的断裂强度为0.07MPa以上，熔融粘度在60Pa以下为4000Pa·s以下 100°C

公开(公告)号：US20130137219A1

公开(公告)日：2013-05-30

申请号：US13686852

申请日：2012-11-27

申请人： NITTO DENKO CORPORATION

发明人： Hiroyuki Senzai ,  Naohide Takamoto ,  Kosuke Morita

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  H01L21/563 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a method for producing a semiconductor device, which is capable of suppressing voids during mounting of a semiconductor element to produce a semiconductor device with high reliability. A method for producing a semiconductor device of the present invention includes the steps of: providing a sealing sheet having a base material and an under-fill material laminated on the base material; bonding the sealing sheet to a surface of a semiconductor wafer on which a connection member is formed; dicing the semiconductor wafer to form a semiconductor element with the under-fill material; retaining the semiconductor element with the under-fill material at 100 to 200° C. for 1 second or more; and electrically connecting the semiconductor element and the adherend through the connection member while filling a space between the adherend and the semiconductor element with the under-fill material.

摘要翻译： 提供一种制造半导体器件的方法，其能够在半导体元件的安装期间抑制空穴以制造具有高可靠性的半导体器件。 本发明的半导体装置的制造方法包括以下步骤：提供层叠在基材上的基材和填充材料的密封片; 将密封片接合到其上形成有连接构件的半导体晶片的表面; 切割半导体晶片以形成具有欠填充材料的半导体元件; 在100〜200℃保持半导体元件与欠补充材料1秒以上; 并且通过所述连接构件将所述半导体元件和所述被粘物电连接，同时用所述填充材料填充所述被粘体和所述半导体元件之间的空间。

公开(公告)号：US20160042986A1

公开(公告)日：2016-02-11

申请号：US14775445

申请日：2014-03-12

申请人： NITTO DENKO CORPORATION

发明人： Naohide Takamoto ,  Kosuke Morita ,  Hiroyuki Senzai

IPC分类号： H01L21/683 ,  B32B27/08 ,  B32B7/12 ,  H01L23/00

CPC分类号： H01L21/6836 ,  B32B5/02 ,  B32B5/26 ,  B32B7/12 ,  B32B15/08 ,  B32B25/06 ,  B32B25/08 ,  B32B25/10 ,  B32B25/12 ,  B32B25/14 ,  B32B27/08 ,  B32B27/10 ,  B32B27/12 ,  B32B27/20 ,  B32B27/22 ,  B32B27/281 ,  B32B27/283 ,  B32B27/285 ,  B32B27/288 ,  B32B27/304 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B27/38 ,  B32B27/40 ,  B32B27/42 ,  B32B29/005 ,  B32B2255/02 ,  B32B2255/10 ,  B32B2255/12 ,  B32B2255/20 ,  B32B2255/205 ,  B32B2262/0269 ,  B32B2262/101 ,  B32B2307/50 ,  B32B2307/514 ,  B32B2307/558 ,  B32B2457/00 ,  B32B2457/14 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L24/13 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L24/97 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/81191 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Provided are a reinforcing sheet which is capable of forming a secondary mounted semiconductor device excellent in impact resistance and which is capable of enhancing efficiency of a secondary mounting process; and a method for producing a secondary mounted semiconductor device using the reinforcing sheet. The present invention provides a reinforcing sheet for reinforcing a secondary mounted semiconductor device in which a primary mounted semiconductor device with a bump electrode formed on a first main surface is electrically connected to a wiring substrate through the bump electrode, wherein the reinforcing sheet includes a base material layer, a pressure-sensitive adhesive layer, and a thermosetting resin layer in this order, and the pressure-sensitive adhesive layer has a breaking strength of 0.07 MPa or more, and a melt viscosity of 4000 Pa·s or less at 60 to 100° C.

摘要翻译： 本发明提供能够形成耐冲击性优异的二次安装半导体装置的增强片，能够提高二次安装工序的效率。 以及使用该增强片的二次安装半导体器件的制造方法。 本发明提供了一种用于加强二次安装的半导体器件的加强片，其中具有形成在第一主表面上的凸起电极的初级安装半导体器件通过凸块电极与布线基板电连接，其中加强片包括基底 材料层，压敏粘合剂层和热固性树脂层，并且压敏粘合剂层的断裂强度为0.07MPa以上，熔融粘度在60Pa以下为4000Pa·s以下 100°C

公开(公告)号：US20130137218A1

公开(公告)日：2013-05-30

申请号：US13686841

申请日：2012-11-27

申请人： NITTO DENKO CORPORATION

发明人： Kosuke Morita ,  Naohide Takamoto ,  Hiroyuki Senzai

IPC分类号： C08L33/00 ,  H01L21/78

CPC分类号： H01L23/293 ,  C08K5/09 ,  C08K5/092 ,  C08K5/18 ,  C08K5/32 ,  C08L33/00 ,  C08L33/10 ,  C08L2203/206 ,  C09D133/10 ,  C09J165/02 ,  H01L21/563 ,  H01L21/78 ,  H01L23/18 ,  H01L23/3737 ,  H01L2224/14181 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/83191 ,  Y10T428/31511 ,  Y10T428/31938 ,  C08L61/06 ,  C08L63/00 ,  H01L2924/00012

摘要： The present invention provides an under-fill material with which a semiconductor device having a high connection reliability can be provided while securing a usable material by reducing a difference in thermal-responsive behavior between a semiconductor element and an adherend, and a method for producing a semiconductor device using the under-fill material. In the under-fill material of the present invention, a storage elastic modulus E′ [MPa] and a thermal expansion coefficient α [ppm/K] after carrying out a heat-curing treatment at 175° C. for an hour satisfy the following formula (1) at 25° C.: E′×α

摘要翻译： 本发明提供一种填充材料，通过减少半导体元件和被粘物之间的热响应特性的差异来确保可用材料，可以提供具有高连接可靠性的半导体器件，以及制造方法 半导体器件使用填充不足的材料。 在本发明的填充不足的材料中，在175℃下进行1小时的热固化处理后的储能弹性模量E'[MPa]和热膨胀系数α[ppm / K]满足以下 式（1）在25℃下：E'×α<250000 [Pa / K]（1）

公开(公告)号：US09368421B2

公开(公告)日：2016-06-14

申请号：US14732517

申请日：2015-06-05

申请人： NITTO DENKO CORPORATION

发明人： Kosuke Morita ,  Naohide Takamoto ,  Hiroyuki Senzai

IPC分类号： H01L23/18 ,  H01L23/29 ,  C08L33/00 ,  H01L21/78 ,  C09D133/10 ,  C08L33/10 ,  H01L23/373 ,  H01L21/56 ,  C08K5/09 ,  C08K5/092 ,  C08K5/18 ,  C08K5/32 ,  C09J165/02

CPC分类号： H01L23/293 ,  C08K5/09 ,  C08K5/092 ,  C08K5/18 ,  C08K5/32 ,  C08L33/00 ,  C08L33/10 ,  C08L2203/206 ,  C09D133/10 ,  C09J165/02 ,  H01L21/563 ,  H01L21/78 ,  H01L23/18 ,  H01L23/3737 ,  H01L2224/14181 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/83191 ,  Y10T428/31511 ,  Y10T428/31938 ,  C08L61/06 ,  C08L63/00 ,  H01L2924/00012

摘要： The present invention provides an under-fill material with which a semiconductor device having a high connection reliability can be provided while securing a usable material by reducing a difference in thermal-responsive behavior between a semiconductor element and an adherend, and a method for producing a semiconductor device using the under-fill material. In the under-fill material of the present invention, a storage elastic modulus E′ [MPa] and a thermal expansion coefficient α [ppm/K] after carrying out a heat-curing treatment at 175° C. for an hour satisfy the following formula (1) at 25° C.: E′×α

公开(公告)号：US20150270188A1

公开(公告)日：2015-09-24

申请号：US14732517

申请日：2015-06-05

申请人： NITTO DENKO CORPORATION

发明人： Kosuke Morita ,  Naohide Takamoto ,  Hiroyuki Senzai

IPC分类号： H01L23/29 ,  H01L21/56 ,  H01L23/18 ,  C08K5/32 ,  C08K5/09 ,  C08K5/092 ,  C08K5/18 ,  H01L21/78 ,  C09J165/02

CPC分类号： H01L23/293 ,  C08K5/09 ,  C08K5/092 ,  C08K5/18 ,  C08K5/32 ,  C08L33/00 ,  C08L33/10 ,  C08L2203/206 ,  C09D133/10 ,  C09J165/02 ,  H01L21/563 ,  H01L21/78 ,  H01L23/18 ,  H01L23/3737 ,  H01L2224/14181 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/83191 ,  Y10T428/31511 ,  Y10T428/31938 ,  C08L61/06 ,  C08L63/00 ,  H01L2924/00012

摘要： The present invention provides an under-fill material with which a semiconductor device having a high connection reliability can be provided while securing a usable material by reducing a difference in thermal-responsive behavior between a semiconductor element and an adherend, and a method for producing a semiconductor device using the under-fill material. In the under-fill material of the present invention, a storage elastic modulus E′ [MPa] and a thermal expansion coefficient α [ppm/K] after carrying out a heat-curing treatment at 175° C. for an hour satisfy the following formula (1) at 25° C.: E′×α

摘要翻译： 本发明提供一种填充材料，通过减少半导体元件和被粘物之间的热响应特性的差异来确保可用材料，可以提供具有高连接可靠性的半导体器件，以及制造方法 半导体器件使用填充不足的材料。 在本发明的填充不足的材料中，在175℃下进行1小时的热固化处理后的储能弹性模量E'[MPa]和热膨胀系数α[ppm / K]满足以下 式（1）在25℃：E'×α<250000 [Pa / K]（1）。

公开(公告)号：US08951843B2

公开(公告)日：2015-02-10

申请号：US13712707

申请日：2012-12-12

申请人： Nitto Denko Corporation

发明人： Hiroyuki Senzai ,  Shumpei Tanaka ,  Koji Mizuno

IPC分类号： H01L21/00 ,  B23B3/30 ,  H01L21/78 ,  H01L21/683 ,  C09J7/02 ,  H01L23/00

CPC分类号： C09J7/0207 ,  B23B3/30 ,  B32B3/30 ,  C09J7/20 ,  C09J7/38 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2201/61 ,  C09J2201/622 ,  C09J2203/326 ,  C09J2463/00 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/27436 ,  H01L2224/29023 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83855 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/15787 ,  Y10T428/24355 ,  Y10T428/31511 ,  H01L2224/27 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： The present invention provides a laminated sheet that can prevent the decrease in adhering strength of a resin composition layer and the deterioration in electrical reliability and in which a back grinding tape can be peeled from a plurality of semiconductor elements collectively after dicing. The laminated sheet has a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, wherein the tensile modulus of the pressure-sensitive adhesive layer at 23° C. is 0.1 to 5.0 MPa, and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is 0.1 to 5 N/20 mm at 23° C. and 300 mm/min.

摘要翻译： 本发明提供一种能够防止树脂组合物层的粘合强度降低和电可靠性劣化并且背面研磨带能够在切割之后集体从多个半导体元件剥离的层叠片材。 层叠片材具有在基材上形成有压敏粘合剂层的背面研磨带和设置在背面研磨带的压敏粘合剂层上的树脂组合物层，其中压力的拉伸模量 在23℃下的敏感性粘合剂层为0.1〜5.0MPa，粘合剂层与树脂组合物层的T剥离强度在23℃为0.1〜5N / 20mm，300℃/ 分钟

公开(公告)号：US20130149842A1

公开(公告)日：2013-06-13

申请号：US13712707

申请日：2012-12-12

申请人： NITTO DENKO CORPORATION

发明人： Hiroyuki Senzai ,  Shumpei Tanaka ,  Koji Mizuno

IPC分类号： B32B3/30 ,  H01L21/78

CPC分类号： C09J7/0207 ,  B23B3/30 ,  B32B3/30 ,  C09J7/20 ,  C09J7/38 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2201/61 ,  C09J2201/622 ,  C09J2203/326 ,  C09J2463/00 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/27436 ,  H01L2224/29023 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83855 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/15787 ,  Y10T428/24355 ,  Y10T428/31511 ,  H01L2224/27 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： The present invention provides a laminated sheet that can prevent the decrease in adhering strength of a resin composition layer and the deterioration in electrical reliability and in which a back grinding tape can be peeled from a plurality of semiconductor elements collectively after dicing. The laminated sheet has a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, wherein the tensile modulus of the pressure-sensitive adhesive layer at 23° C. is 0.1 to 5.0 MPa, and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is 0.1 to 5 N/20 mm at 23° C. and 300 mm/min.

摘要翻译： 本发明提供一种能够防止树脂组合物层的粘合强度降低和电可靠性劣化并且背面研磨带能够在切割之后集体从多个半导体元件剥离的层叠片材。 层叠片材具有在基材上形成有压敏粘合剂层的背面研磨带和设置在背面研磨带的压敏粘合剂层上的树脂组合物层，其中压力的拉伸模量 在23℃下的敏感性粘合剂层为0.1〜5.0MPa，粘合剂层与树脂组合物层的T剥离强度在23℃为0.1〜5N / 20mm，300℃/ 分钟

公开(公告)号：US09085685B2

公开(公告)日：2015-07-21

申请号：US13686841

申请日：2012-11-27

申请人： NITTO DENKO CORPORATION

发明人： Kosuke Morita ,  Naohide Takamoto ,  Hiroyuki Senzai

IPC分类号： H01L21/18 ,  C08L33/00 ,  H01L23/18 ,  H01L21/78 ,  C09D133/10 ,  C08L33/10 ,  H01L23/373 ,  H01L21/56 ,  H01L23/29

CPC分类号： H01L23/293 ,  C08K5/09 ,  C08K5/092 ,  C08K5/18 ,  C08K5/32 ,  C08L33/00 ,  C08L33/10 ,  C08L2203/206 ,  C09D133/10 ,  C09J165/02 ,  H01L21/563 ,  H01L21/78 ,  H01L23/18 ,  H01L23/3737 ,  H01L2224/14181 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/83191 ,  Y10T428/31511 ,  Y10T428/31938 ,  C08L61/06 ,  C08L63/00 ,  H01L2924/00012

摘要： The present invention provides an under-fill material with which a semiconductor device having a high connection reliability can be provided while securing a usable material by reducing a difference in thermal-responsive behavior between a semiconductor element and an adherend, and a method for producing a semiconductor device using the under-fill material. In the under-fill material of the present invention, a storage elastic modulus E′ [MPa] and a thermal expansion coefficient α [ppm/K] after carrying out a heat-curing treatment at 175° C. for an hour satisfy the following formula (1) at 25° C.: E′×α

摘要翻译： 本发明提供一种填充材料，通过减少半导体元件和被粘物之间的热响应特性的差异来确保可用材料，可以提供具有高连接可靠性的半导体器件，以及制造方法 半导体器件使用填充不足的材料。 在本发明的填充不足的材料中，在175℃下进行1小时的热固化处理后的储能弹性模量E'[MPa]和热膨胀系数α[ppm / K]满足以下 式（1）在25℃：E'×α<250000 [Pa / K]（1）。

公开(公告)号：US20150104649A1

公开(公告)日：2015-04-16

申请号：US14580054

申请日：2014-12-22

申请人： NITTO DENKO CORPORATION

发明人： Hiroyuki Senzai ,  Shumpei Tanaka ,  Koji Mizuno

IPC分类号： C09J7/02

CPC分类号： B23B3/30 ,  B32B3/30 ,  C09J7/20 ,  C09J7/38 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2201/61 ,  C09J2201/622 ,  C09J2203/326 ,  C09J2463/00 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/27436 ,  H01L2224/29023 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83855 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/15787 ,  Y10T428/24355 ,  Y10T428/31511 ,  H01L2224/27 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： The present invention provides a laminated sheet that can prevent the decrease in adhering strength of a resin composition layer and the deterioration in electrical reliability and in which a back grinding tape can be peeled from a plurality of semiconductor elements collectively after dicing. The laminated sheet has a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, wherein the tensile modulus of the pressure-sensitive adhesive layer at 23° C. is 0.1 to 5.0 MPa, and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is 0.1 to 5 N/20 mm at 23° C. and 300 mm/min.

摘要翻译： 本发明提供一种能够防止树脂组合物层的粘合强度降低和电可靠性劣化并且背面研磨带能够在切割之后集体从多个半导体元件剥离的层叠片材。 层叠片材具有在基材上形成有压敏粘合剂层的背面研磨带和设置在背面研磨带的压敏粘合剂层上的树脂组合物层，其中压力的拉伸模量 在23℃下的敏感性粘合剂层为0.1〜5.0MPa，粘合剂层与树脂组合物层的T剥离强度在23℃为0.1〜5N / 20mm，300℃/ 分钟