Invention Application
- Patent Title: PROFILED SPUTTER TARGET
- Patent Title (中): 轮廓目标
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Application No.: US13315490Application Date: 2011-12-09
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Publication No.: US20130146442A1Publication Date: 2013-06-13
- Inventor: HONG SHENG YANG , CHI-I LANG
- Applicant: HONG SHENG YANG , CHI-I LANG
- Applicant Address: US CA SAN JOSE
- Assignee: INTERMOLECULAR, INC.
- Current Assignee: INTERMOLECULAR, INC.
- Current Assignee Address: US CA SAN JOSE
- Main IPC: C23C14/35
- IPC: C23C14/35

Abstract:
In one aspect of the invention, a sputter source is provided. The sputter source includes a target source affixed to a bottom plate of the sputter source. A plurality of magnets spaced apart from each other is included. The plurality of magnets is disposed above a surface of the bottom plate, wherein a surface of the target source is profiled such that the target source has a minimum thickness aligned with an axis of each of the plurality of magnets and a maximum thickness aligned with an axis of a gap defined between each of the plurality of magnets. A method of processing a substrate is also included.
Information query
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