PROFILED SPUTTER TARGET
    1.
    发明申请
    PROFILED SPUTTER TARGET 审中-公开
    轮廓目标

    公开(公告)号:US20130146442A1

    公开(公告)日:2013-06-13

    申请号:US13315490

    申请日:2011-12-09

    IPC分类号: C23C14/35

    摘要: In one aspect of the invention, a sputter source is provided. The sputter source includes a target source affixed to a bottom plate of the sputter source. A plurality of magnets spaced apart from each other is included. The plurality of magnets is disposed above a surface of the bottom plate, wherein a surface of the target source is profiled such that the target source has a minimum thickness aligned with an axis of each of the plurality of magnets and a maximum thickness aligned with an axis of a gap defined between each of the plurality of magnets. A method of processing a substrate is also included.

    摘要翻译: 在本发明的一个方面,提供一种溅射源。 溅射源包括固定到溅射源的底板的靶源。 包括彼此间隔开的多个磁体。 所述多个磁体设置在所述底板的表面之上,其中所述目标源的表面被成型为使得所述目标源具有与所述多个磁体中的每一个的轴线对齐的最小厚度, 在所述多个磁体中的每一个之间限定的间隙的轴线。 还包括处理衬底的方法。