Invention Application
- Patent Title: AVALANCHE PHOTO DIODE AND METHOD OF MANUFACTURING THE SAME
- Patent Title (中): AVALANCHE照相二极管及其制造方法
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Application No.: US13605135Application Date: 2012-09-06
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Publication No.: US20130153962A1Publication Date: 2013-06-20
- Inventor: Jae-Sik SIM , Kisoo Kim , Bongki Mheen , MyoungSook Oh , Yong-Hwan Kwon , Eun Soo Nam
- Applicant: Jae-Sik SIM , Kisoo Kim , Bongki Mheen , MyoungSook Oh , Yong-Hwan Kwon , Eun Soo Nam
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Priority: KR10-2011-0136694 20111216
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L31/18
Abstract:
The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.
Public/Granted literature
- US08710547B2 Avalanche photo diode and method of manufacturing the same Public/Granted day:2014-04-29
Information query
IPC分类:
