AVALANCHE PHOTO DIODE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    AVALANCHE PHOTO DIODE AND METHOD OF MANUFACTURING THE SAME 有权
    AVALANCHE照相二极管及其制造方法

    公开(公告)号:US20130153962A1

    公开(公告)日:2013-06-20

    申请号:US13605135

    申请日:2012-09-06

    IPC分类号: H01L31/107 H01L31/18

    CPC分类号: H01L31/107

    摘要: The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.

    摘要翻译: 本发明的概念提供了雪崩光电二极管及其制造方法。 雪崩光电二极管可以包括基板,形成在基板上的光吸收层,形成在光吸收层上的包覆层,形成在包层中的有源区,形成在有源区周围的保护环区,绝缘 形成在保护环区域和有源区域之间的区域。

    AVALANCHE PHOTOTECTOR WITH INTEGRATED MICRO LENS
    2.
    发明申请
    AVALANCHE PHOTOTECTOR WITH INTEGRATED MICRO LENS 审中-公开
    AVALANCHE摄影机与集成微距镜头

    公开(公告)号:US20110140168A1

    公开(公告)日:2011-06-16

    申请号:US12769198

    申请日:2010-04-28

    IPC分类号: H01L31/107

    CPC分类号: H01L31/02327 H01L31/1075

    摘要: Provided is an avalanche photodetector with an integrated micro lens. The avalanche photodetector includes a light absorbing layer on a semiconductor substrate, an amplification layer on the light absorbing layer, a diffusion layer within the amplification layer, and the micro lens disposed corresponding to the diffusion layer. The micro lens includes a first refractive layer and a second refractive layer having a refractive index less than that of the first refractive layer.

    摘要翻译: 提供了具有集成微透镜的雪崩光电探测器。 雪崩光电检测器包括半导体衬底上的光吸收层,光吸收层上的放大层,放大层内的扩散层和对应于扩散层设置的微透镜。 微透镜包括折射率小于第一折射层的折射率的第一折射层和第二折射层。

    METHODS OF FORMING A COMPOUND SEMICONDUCTOR DEVICE INCLUDING A DIFFUSION REGION
    3.
    发明申请
    METHODS OF FORMING A COMPOUND SEMICONDUCTOR DEVICE INCLUDING A DIFFUSION REGION 有权
    形成包括扩散区域的化合物半导体器件的方法

    公开(公告)号:US20100144123A1

    公开(公告)日:2010-06-10

    申请号:US12508382

    申请日:2009-07-23

    IPC分类号: H01L21/20 H01L21/22

    CPC分类号: H01L21/2258

    摘要: Provided is a method of forming a compound semiconductor device. In the method, a dopant element layer is formed on an undoped compound semiconductor layer. An annealing process is performed to diffuse dopants in the dopant element layer into the undoped compound semiconductor layer, thereby forming a dopant diffusion region. A rapid cooling process is performed using liquid nitrogen with respect to the substrate having the dopant diffusion region.

    摘要翻译: 提供一种形成化合物半导体器件的方法。 在该方法中,在未掺杂的化合物半导体层上形成掺杂剂元素层。 执行退火处理以将掺杂剂元素层中的掺杂剂扩散到未掺杂的化合物半导体层中,从而形成掺杂剂扩散区域。 相对于具有掺杂剂扩散区域的基板,使用液氮进行快速冷却处理。

    OPTICAL RECEIVER AND METHOD OF FORMING THE SAME
    4.
    发明申请
    OPTICAL RECEIVER AND METHOD OF FORMING THE SAME 失效
    光接收机及其形成方法

    公开(公告)号:US20100140662A1

    公开(公告)日:2010-06-10

    申请号:US12498918

    申请日:2009-07-07

    CPC分类号: H01L31/1075 H01L31/02327

    摘要: Provided are an optical receiver and a method of forming the same. The optical receiver includes a lens, a photo detector, and a hetero-junction bipolar transistor. The lens is attached to a backside of a substrate. The photo detector is disposed on a top surface of the substrate. The hetero-junction bipolar transistor is disposed on the top surface of the substrate. The lens condenses an incident optical signal to transmit the condensed optical signal to the photo detector.

    摘要翻译: 提供一种光接收机及其形成方法。 光接收器包括透镜,光电检测器和异质结双极晶体管。 透镜附着到基板的背面。 光检测器设置在基板的顶表面上。 异质结双极晶体管设置在基板的顶表面上。 透镜会聚光入射光信号,以将光信号发送到光检测器。