发明申请
- 专利标题： TRENCH GATE MOSFET DEVICE
- 专利标题（中）： TRENCH GATE MOSFET器件
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申请号： US13722863申请日： 2012-12-20
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公开(公告)号： US20130153999A1公开(公告)日： 2013-06-20
- 发明人: Lei Zhang , Donald Disney , Tiesheng Li , Rongyao Ma
- 申请人： Lei Zhang , Donald Disney , Tiesheng Li , Rongyao Ma
- 优先权： CN201110428855.0 20111220
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L27/088
摘要：
A trench gate MOSFET device has a drain region, a drift region, a trench gate having a gate electrode and a poly-silicon region, a super junction pillar juxtaposing the trench gate, a body region and a source region. By the interaction among the trench gate, the drift region and the super junction pillar, the break down voltage of the trench gate MOSFET device may be relatively high while the on-state resistance of the trench gate MOSFET device may be maintained relatively small.
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