公开(公告)号：US20130153999A1

公开(公告)日：2013-06-20

申请号：US13722863

申请日：2012-12-20

申请人： Lei Zhang ,  Donald Disney ,  Tiesheng Li ,  Rongyao Ma

发明人： Lei Zhang ,  Donald Disney ,  Tiesheng Li ,  Rongyao Ma

IPC分类号： H01L29/78 ,  H01L27/088

CPC分类号： H01L29/7813 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376

摘要： A trench gate MOSFET device has a drain region, a drift region, a trench gate having a gate electrode and a poly-silicon region, a super junction pillar juxtaposing the trench gate, a body region and a source region. By the interaction among the trench gate, the drift region and the super junction pillar, the break down voltage of the trench gate MOSFET device may be relatively high while the on-state resistance of the trench gate MOSFET device may be maintained relatively small.

摘要翻译： 沟槽栅极MOSFET器件具有漏极区域，漂移区域，具有栅极电极和多晶硅区域的沟槽栅极，并置沟槽栅极的超连接柱，主体区域和源极区域。 通过沟槽栅极，漂移区域和超连接柱之间的相互作用，沟槽栅极MOSFET器件的击穿电压可能相对较高，同时沟道栅极MOSFET器件的导通状态电阻可以保持相对较小。

公开(公告)号：US20130328122A1

公开(公告)日：2013-12-12

申请号：US13494572

申请日：2012-06-12

申请人： Tiesheng Li ,  Rongyao Ma ,  Lei Zhang

发明人： Tiesheng Li ,  Rongyao Ma ,  Lei Zhang

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7806

摘要： A split trench-gate MOSFET device and method for forming this device is disclosed. The device has a trench gate structure, comprising a shield electrode and two gate electrodes, wherein a substantial portion of shield electrode region is lower than the gate electrode region, and wherein a portion of the shield electrode region extends to the top surface between the two gate electrodes. The device further comprises a source metal layer, contacting to an initial layer, a well region, the shield electrode and a source region at the top surface, wherein the contact between the source metal layer and the initial layer forms a Schottky diode.

摘要翻译： 公开了一种用于形成该器件的分裂沟槽栅MOSFET MOSFET器件和方法。 该器件具有沟槽栅极结构，包括屏蔽电极和两个栅极电极，其中屏蔽电极区域的大部分低于栅电极区域，并且其中屏蔽电极区域的一部分延伸到两者之间的顶表面 栅电极。 该器件还包括源极金属层，其与初始层，阱区，屏蔽电极和顶表面处的源极区接触，其中源极金属层与初始层之间的接触形成肖特基二极管。

公开(公告)号：US08735973B2

公开(公告)日：2014-05-27

申请号：US13462397

申请日：2012-05-02

申请人： Lei Zhang ,  Donald Ray Disney ,  Tiesheng Li ,  Rongyao Ma

发明人： Lei Zhang ,  Donald Ray Disney ,  Tiesheng Li ,  Rongyao Ma

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L21/2652 ,  H01L21/266 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7805

摘要： The embodiments of the present disclosure disclose a trench-gate MOSFET device and the method for making the trench-gate MOSFET device. The trench-gate MOSFET device comprises a curving dopant profile formed between the body region and the epitaxial layer so that the portion of the body region under the source metal contact has a smaller vertical thickness than the other portion of the body region. The trench-gate MOSFET device in accordance with the embodiments of the present disclosure has improved UIS capability compared with the traditional trench-gate MOSFET device.

摘要翻译： 本公开的实施例公开了沟槽栅极MOSFET器件和制造沟槽栅极MOSFET器件的方法。 沟槽栅极MOSFET器件包括在体区和外延层之间形成的弯曲掺杂剂分布，使得源极金属接触下方的主体区域的部分的垂直厚度小于身体区域的另一部分。 根据本公开实施例的沟槽栅MOSFET MOSFET器件与传统沟槽栅极MOSFET器件相比具有改进的UIS能力。

公开(公告)号：US08680614B2

公开(公告)日：2014-03-25

申请号：US13494572

申请日：2012-06-12

申请人： Tiesheng Li ,  Rongyao Ma ,  Lei Zhang

发明人： Tiesheng Li ,  Rongyao Ma ,  Lei Zhang

IPC分类号： H01L29/66

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7806

摘要： A split trench-gate MOSFET device and method for forming this device is disclosed. The device has a trench gate structure, comprising a shield electrode and two gate electrodes, wherein a substantial portion of shield electrode region is lower than the gate electrode region, and wherein a portion of the shield electrode region extends to the top surface between the two gate electrodes. The device further comprises a source metal layer, contacting to an initial layer, a well region, the shield electrode and a source region at the top surface, wherein the contact between the source metal layer and the initial layer forms a Schottky diode.

摘要翻译： 公开了一种用于形成该器件的分裂沟槽栅MOSFET MOSFET器件和方法。 该器件具有沟槽栅极结构，包括屏蔽电极和两个栅极电极，其中屏蔽电极区域的大部分低于栅电极区域，并且其中屏蔽电极区域的一部分延伸到两者之间的顶表面 栅电极。 该器件还包括源极金属层，其与初始层，阱区，屏蔽电极和顶表面处的源极区接触，其中源极金属层与初始层之间的接触形成肖特基二极管。

公开(公告)号：US20120280311A1

公开(公告)日：2012-11-08

申请号：US13462397

申请日：2012-05-02

申请人： Lei Zhang ,  Donald R. Disney ,  Tiesheng Li ,  Rongyao Ma

发明人： Lei Zhang ,  Donald R. Disney ,  Tiesheng Li ,  Rongyao Ma

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/2652 ,  H01L21/266 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7805

摘要： The embodiments of the present disclosure disclose a trench-gate MOSFET device and the method for making the trench-gate MOSFET device. The trench-gate MOSFET device comprises a curving dopant profile formed between the body region and the epitaxial layer so that the portion of the body region under the source metal contact has a smaller vertical thickness than the other portion of the body region. The trench-gate MOSFET device in accordance with the embodiments of the present disclosure has improved UIS capability compared with the traditional trench-gate MOSFET device.

摘要翻译： 本公开的实施例公开了沟槽栅极MOSFET器件和制造沟槽栅极MOSFET器件的方法。 沟槽栅极MOSFET器件包括在体区和外延层之间形成的弯曲掺杂剂分布，使得源极金属接触下方的主体区域的部分的垂直厚度小于身体区域的另一部分。 根据本公开实施例的沟槽栅MOSFET MOSFET器件与传统沟槽栅极MOSFET器件相比具有改进的UIS能力。