公开(公告)号：US20130153999A1

公开(公告)日：2013-06-20

申请号：US13722863

申请日：2012-12-20

申请人： Lei Zhang ,  Donald Disney ,  Tiesheng Li ,  Rongyao Ma

发明人： Lei Zhang ,  Donald Disney ,  Tiesheng Li ,  Rongyao Ma

IPC分类号： H01L29/78 ,  H01L27/088

CPC分类号： H01L29/7813 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376

摘要： A trench gate MOSFET device has a drain region, a drift region, a trench gate having a gate electrode and a poly-silicon region, a super junction pillar juxtaposing the trench gate, a body region and a source region. By the interaction among the trench gate, the drift region and the super junction pillar, the break down voltage of the trench gate MOSFET device may be relatively high while the on-state resistance of the trench gate MOSFET device may be maintained relatively small.

摘要翻译： 沟槽栅极MOSFET器件具有漏极区域，漂移区域，具有栅极电极和多晶硅区域的沟槽栅极，并置沟槽栅极的超连接柱，主体区域和源极区域。 通过沟槽栅极，漂移区域和超连接柱之间的相互作用，沟槽栅极MOSFET器件的击穿电压可能相对较高，同时沟道栅极MOSFET器件的导通状态电阻可以保持相对较小。

公开(公告)号：US20130328122A1

公开(公告)日：2013-12-12

申请号：US13494572

申请日：2012-06-12

申请人： Tiesheng Li ,  Rongyao Ma ,  Lei Zhang

发明人： Tiesheng Li ,  Rongyao Ma ,  Lei Zhang

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7806

摘要： A split trench-gate MOSFET device and method for forming this device is disclosed. The device has a trench gate structure, comprising a shield electrode and two gate electrodes, wherein a substantial portion of shield electrode region is lower than the gate electrode region, and wherein a portion of the shield electrode region extends to the top surface between the two gate electrodes. The device further comprises a source metal layer, contacting to an initial layer, a well region, the shield electrode and a source region at the top surface, wherein the contact between the source metal layer and the initial layer forms a Schottky diode.

摘要翻译： 公开了一种用于形成该器件的分裂沟槽栅MOSFET MOSFET器件和方法。 该器件具有沟槽栅极结构，包括屏蔽电极和两个栅极电极，其中屏蔽电极区域的大部分低于栅电极区域，并且其中屏蔽电极区域的一部分延伸到两者之间的顶表面 栅电极。 该器件还包括源极金属层，其与初始层，阱区，屏蔽电极和顶表面处的源极区接触，其中源极金属层与初始层之间的接触形成肖特基二极管。

公开(公告)号：US08735973B2

公开(公告)日：2014-05-27

申请号：US13462397

申请日：2012-05-02

申请人： Lei Zhang ,  Donald Ray Disney ,  Tiesheng Li ,  Rongyao Ma

发明人： Lei Zhang ,  Donald Ray Disney ,  Tiesheng Li ,  Rongyao Ma

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L21/2652 ,  H01L21/266 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7805

摘要： The embodiments of the present disclosure disclose a trench-gate MOSFET device and the method for making the trench-gate MOSFET device. The trench-gate MOSFET device comprises a curving dopant profile formed between the body region and the epitaxial layer so that the portion of the body region under the source metal contact has a smaller vertical thickness than the other portion of the body region. The trench-gate MOSFET device in accordance with the embodiments of the present disclosure has improved UIS capability compared with the traditional trench-gate MOSFET device.

摘要翻译： 本公开的实施例公开了沟槽栅极MOSFET器件和制造沟槽栅极MOSFET器件的方法。 沟槽栅极MOSFET器件包括在体区和外延层之间形成的弯曲掺杂剂分布，使得源极金属接触下方的主体区域的部分的垂直厚度小于身体区域的另一部分。 根据本公开实施例的沟槽栅MOSFET MOSFET器件与传统沟槽栅极MOSFET器件相比具有改进的UIS能力。

公开(公告)号：US08680614B2

公开(公告)日：2014-03-25

申请号：US13494572

申请日：2012-06-12

申请人： Tiesheng Li ,  Rongyao Ma ,  Lei Zhang

发明人： Tiesheng Li ,  Rongyao Ma ,  Lei Zhang

IPC分类号： H01L29/66

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7806

摘要： A split trench-gate MOSFET device and method for forming this device is disclosed. The device has a trench gate structure, comprising a shield electrode and two gate electrodes, wherein a substantial portion of shield electrode region is lower than the gate electrode region, and wherein a portion of the shield electrode region extends to the top surface between the two gate electrodes. The device further comprises a source metal layer, contacting to an initial layer, a well region, the shield electrode and a source region at the top surface, wherein the contact between the source metal layer and the initial layer forms a Schottky diode.

摘要翻译： 公开了一种用于形成该器件的分裂沟槽栅MOSFET MOSFET器件和方法。 该器件具有沟槽栅极结构，包括屏蔽电极和两个栅极电极，其中屏蔽电极区域的大部分低于栅电极区域，并且其中屏蔽电极区域的一部分延伸到两者之间的顶表面 栅电极。 该器件还包括源极金属层，其与初始层，阱区，屏蔽电极和顶表面处的源极区接触，其中源极金属层与初始层之间的接触形成肖特基二极管。

公开(公告)号：US20120280311A1

公开(公告)日：2012-11-08

申请号：US13462397

申请日：2012-05-02

申请人： Lei Zhang ,  Donald R. Disney ,  Tiesheng Li ,  Rongyao Ma

发明人： Lei Zhang ,  Donald R. Disney ,  Tiesheng Li ,  Rongyao Ma

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/2652 ,  H01L21/266 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7805

摘要： The embodiments of the present disclosure disclose a trench-gate MOSFET device and the method for making the trench-gate MOSFET device. The trench-gate MOSFET device comprises a curving dopant profile formed between the body region and the epitaxial layer so that the portion of the body region under the source metal contact has a smaller vertical thickness than the other portion of the body region. The trench-gate MOSFET device in accordance with the embodiments of the present disclosure has improved UIS capability compared with the traditional trench-gate MOSFET device.

摘要翻译： 本公开的实施例公开了沟槽栅极MOSFET器件和制造沟槽栅极MOSFET器件的方法。 沟槽栅极MOSFET器件包括在体区和外延层之间形成的弯曲掺杂剂分布，使得源极金属接触下方的主体区域的部分的垂直厚度小于身体区域的另一部分。 根据本公开实施例的沟槽栅MOSFET MOSFET器件与传统沟槽栅极MOSFET器件相比具有改进的UIS能力。

公开(公告)号：US08735968B2

公开(公告)日：2014-05-27

申请号：US12980143

申请日：2010-12-28

申请人： Tiesheng Li ,  Lei Zhang

发明人： Tiesheng Li ,  Lei Zhang

IPC分类号： H01L27/105 ,  H01L21/8234

CPC分类号： H01L29/7811 ,  H01L27/0629 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/41766 ,  H01L29/7806 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present technology discloses a semiconductor die integrating a MOSFET device and a Schottky diode. The semiconductor die comprises a MOSFET area comprising the active region of MOSFET, a Schottky diode area comprising the active region of Schottky diode, and a termination area comprising termination structures. Wherein the Schottky diode area is placed between the MOSFET area and the termination area such that the Schottky diode area surrounds the MOSFET area.

摘要翻译： 本技术公开了一种集成MOSFET器件和肖特基二极管的半导体管芯。 半导体管芯包括MOSFET区域，其包括MOSFET的有源区，包括肖特基二极管的有源区的肖特基二极管区域和包含端接结构的终端区域。 其中肖特基二极管区域放置在MOSFET区域和端接区域之间，使得肖特基二极管区域围绕MOSFET区域。

公开(公告)号：US07977193B1

公开(公告)日：2011-07-12

申请号：US12908774

申请日：2010-10-20

申请人： Donald R. Disney ,  Tiesheng Li ,  Lei Zhang

发明人： Donald R. Disney ,  Tiesheng Li ,  Lei Zhang

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/407 ,  H01L29/42376 ,  H01L29/66734

摘要： A trench-gate metal oxide semiconductor field-effect transistor includes a field plate that extends into a drift region of the transistor. The field plate is configured to deplete the drift region when the transistor is in the OFF-state. The field plate is formed in a field plate trench. The field plate trench may be formed using a self-aligned etch process. The conductive material of the field plate and gate of the transistor may be deposited in the same deposition process step. The conductive material may be etched thereafter to form the field plate and the gate in the same etch process step.

摘要翻译： 沟槽栅极金属氧化物半导体场效应晶体管包括延伸到晶体管的漂移区域的场板。 场板配置为在晶体管处于截止状态时耗尽漂移区域。 场板形成在场板沟槽中。 场板沟槽可以使用自对准蚀刻工艺形成。 晶体管的场板和栅极的导电材料可以在相同的沉积工艺步骤中沉积。 之后可以蚀刻导电材料，以在相同的蚀刻工艺步骤中形成场板和栅极。

公开(公告)号：US08716784B2

公开(公告)日：2014-05-06

申请号：US13278463

申请日：2011-10-21

申请人： Lei Zhang ,  Tiesheng Li

发明人： Lei Zhang ,  Tiesheng Li

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L29/80 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L29/7813 ,  H01L21/76224 ,  H01L27/0629 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/66734 ,  H01L29/7806

摘要： A semiconductor device and a method for forming the semiconductor device wherein the semiconductor comprises: a trench MOSFET, formed on a semiconductor initial layer, comprising a well region, wherein the semiconductor initial layer has a first conductivity type and wherein the well region has a second conductivity type; an integrated Schottky diode next to the trench MOSFET, comprising a anode metal layer contacted to the semiconductor initial layer; a trench isolation structure, coupled between the trench MOSFET and integrated Schottky diode, configured to resist part of lateral diffusion from the well region; wherein the well region comprises an overgrowth part which laterally diffuses under the trench isolation structure and extends out of it.

摘要翻译： 一种用于形成半导体器件的半导体器件和方法，其中所述半导体包括：形成在半导体初始层上的沟槽MOSFET，包括阱区，其中所述半导体初始层具有第一导电类型，并且其中所述阱区具有第二 导电型; 在沟槽MOSFET旁边的集成肖特基二极管，包括与半导体初始层接触的阳极金属层; 耦合在所述沟槽MOSFET和集成肖特基二极管之间的沟槽隔离结构，被配置为抵抗来自所述阱区域的一部分横向扩散; 其中所述阱区域包括在所述沟槽隔离结构之下横向扩散并从其延伸出的过度生长部分。

公开(公告)号：US20120161225A1

公开(公告)日：2012-06-28

申请号：US12980143

申请日：2010-12-28

申请人： Tiesheng Li ,  Lei Zhang

发明人： Tiesheng Li ,  Lei Zhang

IPC分类号： H01L27/105 ,  H01L21/8234

CPC分类号： H01L29/7811 ,  H01L27/0629 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/41766 ,  H01L29/7806 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present technology discloses a semiconductor die integrating a MOSFET device and a Schottky diode. The semiconductor die comprises a MOSFET area comprising the active region of MOSFET, a Schottky diode area comprising the active region of Schottky diode, and a termination area comprising termination structures. Wherein the Schottky diode area is placed between the MOSFET area and the termination area such that the Schottky diode area surrounds the MOSFET area.

摘要翻译： 本技术公开了一种集成MOSFET器件和肖特基二极管的半导体管芯。 半导体管芯包括MOSFET区域，其包括MOSFET的有源区，包括肖特基二极管的有源区的肖特基二极管区域和包含端接结构的端接区域。 其中肖特基二极管区域放置在MOSFET区域和端接区域之间，使得肖特基二极管区域围绕MOSFET区域。

公开(公告)号：US20130043534A1

公开(公告)日：2013-02-21

申请号：US13213011

申请日：2011-08-18

申请人： Donald R. Disney ,  Lei Zhang ,  Tiesheng Li

发明人： Donald R. Disney ,  Lei Zhang ,  Tiesheng Li

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7816 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66689 ,  H01L29/66696

摘要： The present disclosure discloses a lateral DMOS with recessed source contact and method for making the same. The lateral DMOS comprises a recessed source contact which has a portion recessed into a source region to reach a body region of the lateral DMOS. The lateral DMOS according to various embodiments of the present invention may have greatly reduced size and may be cost saving for fabrication.

摘要翻译： 本公开公开了一种具有凹陷源触点的横向DMOS及其制造方法。 横向DMOS包括凹入的源极接触件，其具有凹入到源区域中的部分以到达侧向DMOS的主体区域。 根据本发明的各种实施例的横向DMOS可以具有大大减小的尺寸，并且可以节省制造成本。