Invention Application
- Patent Title: REPLACEMENT OF A FAULTY MEMORY CELL WITH A SPARE CELL FOR A MEMORY CIRCUIT
-
Application No.: US13782348Application Date: 2013-03-01
-
Publication No.: US20130176768A1Publication Date: 2013-07-11
- Inventor: David T. WANG
- Applicant: Inphi Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Inphi Corporation
- Current Assignee: Inphi Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: G11C29/04
- IPC: G11C29/04 ; G11C11/24

Abstract:
A memory integrated circuit device is provided. The device includes a plurality of regular address inputs and at least one spare address input configured for a selected mode or an unselected mode. The device includes a plurality of control inputs, a plurality of data inputs, and a plurality of data outputs. The device has a plurality of memory arrays. Each of the memory arrays comprises a plurality of memory cells. Each of the plurality of memory cells is coupled to a data input/output. The device has a spare group of memory cells comprising a plurality of spare memory cells. Each of the plurality of spare memory cells is externally (or internally) addressable using the address match table and configured with the spare address input; whereupon the spare address input is coupled to the address match table to access the spare memory cells.
Public/Granted literature
- US08971094B2 Replacement of a faulty memory cell with a spare cell for a memory circuit Public/Granted day:2015-03-03
Information query