发明申请
US20130181265A1 Methods of Forming a Gate Cap Layer Above a Replacement Gate Structure and a Semiconductor Device That Includes Such a Gate Structure and Cap Layer
审中-公开
在替代栅极结构之上形成栅极盖层的方法以及包括这种栅极结构和盖层的半导体器件
- 专利标题： Methods of Forming a Gate Cap Layer Above a Replacement Gate Structure and a Semiconductor Device That Includes Such a Gate Structure and Cap Layer
- 专利标题（中）： 在替代栅极结构之上形成栅极盖层的方法以及包括这种栅极结构和盖层的半导体器件
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申请号： US13352775申请日： 2012-01-18
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公开(公告)号： US20130181265A1公开(公告)日： 2013-07-18
- 发明人: Gunter Grasshoff , Catherine Labelle
- 申请人： Gunter Grasshoff , Catherine Labelle
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28 ; H01L21/311
摘要：
Disclosed herein are various methods of forming a gate cap layer above a replacement gate structure, and a device having such a cap layer. In one example, a device disclosed herein includes a replacement gate structure having a dished upper surface, sidewall spacers positioned proximate the replacement gate structure and a gate cap layer positioned above the replacement gate structure, wherein the gate cap layer has a bottom surface that corresponds to the dished upper surface of the replacement gate structure.
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