发明申请
- 专利标题: OVERLAY MARK AND APPLICATION THEREOF
- 专利标题(中): 覆盖标志及其应用
-
申请号: US13349576申请日: 2012-01-13
-
公开(公告)号: US20130182255A1公开(公告)日: 2013-07-18
- 发明人: Jianming Zhou , Craig Hickman
- 申请人: Jianming Zhou , Craig Hickman
- 申请人地址: TW Taoyuan
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW Taoyuan
- 主分类号: G01B11/00
- IPC分类号: G01B11/00 ; H01L23/544
摘要:
An overlay mark for checking alignment accuracy between a former layer and a later layer on a wafer is described, including a former pattern as a part of the former layer, and a later pattern as a part of a patterned photoresist layer defining the later layer. The former pattern has two parallel opposite edges each forming a sharp angle α with the x-axis of the wafer. The later pattern also has two parallel opposite edges each forming the sharp angle α with the x-axis of the wafer.
公开/授权文献
- US09134628B2 Overlay mark and application thereof 公开/授权日:2015-09-15
信息查询