- 专利标题: METHOD FOR DEPOSITING A CHLORINE-FREE CONFORMAL SIN FILM
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申请号: US13414619申请日: 2012-03-07
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公开(公告)号: US20130189854A1公开(公告)日: 2013-07-25
- 发明人: Dennis Hausmann , Jon Henri , Bart van Schravendijk , Easwar Srinivasan
- 申请人: Dennis Hausmann , Jon Henri , Bart van Schravendijk , Easwar Srinivasan
- 主分类号: H01L21/318
- IPC分类号: H01L21/318
摘要:
Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.
公开/授权文献
- US08592328B2 Method for depositing a chlorine-free conformal sin film 公开/授权日:2013-11-26