公开(公告)号：US08592328B2

公开(公告)日：2013-11-26

申请号：US13414619

申请日：2012-03-07

申请人： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

发明人： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

IPC分类号： H01L21/471 ,  H05H1/24

CPC分类号： C23C16/345 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/7843

摘要： Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.

公开(公告)号：US20130189854A1

公开(公告)日：2013-07-25

申请号：US13414619

申请日：2012-03-07

申请人： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

发明人： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

IPC分类号： H01L21/318

CPC分类号： C23C16/345 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/7843

摘要： Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.

公开(公告)号：US07745346B2

公开(公告)日：2010-06-29

申请号：US12253807

申请日：2008-10-17

申请人： Dennis Hausmann ,  James S. Sims ,  Andrew Antonelli ,  Sesha Varadarajan ,  Bart Van Schravendijk

发明人： Dennis Hausmann ,  James S. Sims ,  Andrew Antonelli ,  Sesha Varadarajan ,  Bart Van Schravendijk

IPC分类号： H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/345 ,  C23C16/402 ,  C23C16/515 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3185

摘要： A method for forming a silicon-based dielectric film on a substrate with a single deposition process operation using pulsed plasma enhanced chemical vapor deposition (PECVD) wherein the high frequency radio frequency power of the plasma is pulsed, allows enhanced control, efficiency and product quality of the PECVD process. Pulsing the high frequency RF power of the plasma reduces the deposited film thickness per unit time the high frequency RF power of the plasma is on. This yields silicon-based dielectric films that are both thin and conformal.

摘要翻译： 一种使用脉冲等离子体增强化学气相沉积（PECVD）的单次沉积工艺操作在衬底上形成硅基电介质膜的方法，其中等离子体的高频射频功率被脉冲化，从而提高了控制，效率和产品质量 的PECVD过程。 脉冲等离子体的高频RF功率等离子体的高频RF功率降低了每单位时间的沉积膜厚度。 这产生了薄且保形的硅基电介质膜。

公开(公告)号：US20100099271A1

公开(公告)日：2010-04-22

申请号：US12253807

申请日：2008-10-17

申请人： Dennis Hausmann ,  James S. Sims ,  Andrew Antonelli ,  Sesha Varadarajan ,  Bart Van Schravendijk

发明人： Dennis Hausmann ,  James S. Sims ,  Andrew Antonelli ,  Sesha Varadarajan ,  Bart Van Schravendijk

IPC分类号： H01L21/314 ,  C23C16/00

CPC分类号： H01L21/31612 ,  C23C16/345 ,  C23C16/402 ,  C23C16/515 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3185

摘要： A method for forming a silicon-based dielectric film on a substrate with a single deposition process operation using pulsed plasma enhanced chemical vapor deposition (PECVD) wherein the high frequency radio frequency power of the plasma is pulsed, allows enhanced control, efficiency and product quality of the PECVD process. Pulsing the high frequency RF power of the plasma reduces the deposited film thickness per unit time the high frequency RF power of the plasma is on. This yields silicon-based dielectric films that are both thin and conformal.

摘要翻译： 一种使用脉冲等离子体增强化学气相沉积（PECVD）的单次沉积工艺操作在衬底上形成硅基电介质膜的方法，其中等离子体的高频射频功率被脉冲化，从而提高了控制，效率和产品质量 的PECVD过程。 脉冲等离子体的高频RF功率等离子体的高频RF功率降低了每单位时间的沉积膜厚度。 这产生了薄且保形的硅基电介质膜。

公开(公告)号：US20140051262A9

公开(公告)日：2014-02-20

申请号：US13472282

申请日：2012-05-15

申请人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

发明人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

IPC分类号： H01L21/318

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228

摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.

摘要翻译： 描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。 根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。 在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。 该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

公开(公告)号：US08647993B2

公开(公告)日：2014-02-11

申请号：US13472282

申请日：2012-05-15

申请人： Adrien LaVoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

发明人： Adrien LaVoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228

摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.

摘要翻译： 描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。 根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。 在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。 该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

公开(公告)号：US20130196516A1

公开(公告)日：2013-08-01

申请号：US13472282

申请日：2012-05-15

申请人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

发明人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

IPC分类号： H01L21/318

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228

摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.

摘要翻译： 描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。 根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。 在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。 该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

公开(公告)号：US07700155B1

公开(公告)日：2010-04-20

申请号：US10821092

申请日：2004-04-08

申请人： Francisco Juarez ,  Dennis Hausmann ,  Bunsen Nie ,  Teresa Pong ,  Adrianne Tipton ,  Patrick Van Cleemput

发明人： Francisco Juarez ,  Dennis Hausmann ,  Bunsen Nie ,  Teresa Pong ,  Adrianne Tipton ,  Patrick Van Cleemput

IPC分类号： C23C16/00

CPC分类号： C23C16/45523 ,  C23C16/45589

摘要： A method of depositing material on a substrate comprises providing a reactor with a reaction chamber having a first volume, and contacting a surface of a substrate in the reaction chamber with a first precursor at the first chamber volume to react with and deposit a first layer on the substrate. The method further includes enlarging the reaction chamber to a second, larger volume and removing undeposited first precursor and any excess reaction product to end reaction of the first precursor with the substrate.

摘要翻译： 在衬底上沉积材料的方法包括提供具有第一体积的反应室的反应器，并且使反应室中的衬底的表面与第一室体积处的第一前体接触以与第一层反应并将第一层沉积在 底物。 该方法还包括将反应室扩大至第二较大体积并除去未沉积的第一前体和任何过量的反应产物以终止第一前体与基底的反应。

公开(公告)号：US07550851B2

公开(公告)日：2009-06-23

申请号：US11429567

申请日：2006-05-04

申请人： Huong T. Nguyen ,  Dennis Hausmann

发明人： Huong T. Nguyen ,  Dennis Hausmann

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/485 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76856 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process is described that forms a low resistivity connection between a tungsten layer and a silicon surface with high adherence of the tungsten to the silicon. The silicon surface is plasma-cleaned to remove native oxide. A very thin layer (one or more monolayers) of Si-NH2 is formed on the silicon surface, serving as an adhesion layer. A WNx layer is formed over the Si-NH2 layer, using an atomic layer deposition (ALD) process, to serve as a barrier layer. A thick tungsten layer is formed over the WNx layer by CVD. An additional metal layer (e.g., aluminum) may be formed over the tungsten layer.

摘要翻译： 描述了在钨层与硅表面之间形成低电阻率连接的方法，其具有钨与硅的高附着性。 硅表面被等离子体清洁以除去天然氧化物。 在硅表面上形成非常薄的Si-NH 2层（一个或多个单层），作为粘合层。 使用原子层沉积（ALD）工艺在Si-NH 2层上形成WNx层以用作阻挡层。 通过CVD在WNx层上形成厚的钨层。 可以在钨层之上形成另外的金属层（例如铝）。

公开(公告)号：US20060276033A1

公开(公告)日：2006-12-07

申请号：US11146884

申请日：2005-06-06

申请人： Huong Nguyen ,  Dennis Hausmann

发明人： Huong Nguyen ,  Dennis Hausmann

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/31

CPC分类号： H01L23/485 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76856 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process is described that forms a low resistivity connection between a tungsten layer and a silicon surface with high adherence of the tungsten to the silicon. The silicon surface is plasma-cleaned to remove native oxide. A very thin layer (one or more monolayers) of Si—NH2 is formed on the silicon surface, serving as an adhesion layer. A WNx layer is formed over the Si—NH2 layer, using an atomic layer deposition (ALD) process, to serve as a barrier layer. A thick tungsten layer is formed over the WNx layer by CVD. An additional metal layer (e.g., aluminum) may be formed over the tungsten layer.

摘要翻译： 描述了在钨层与硅表面之间形成低电阻率连接的方法，其具有钨与硅的高附着性。 硅表面被等离子体清洁以除去天然氧化物。 在硅表面上形成非常薄的Si-NH 2层（一个或多个单层）作为粘合层。 使用原子层沉积（ALD）工艺在Si-NH 2层上形成WN层x层用作阻挡层。 通过CVD在WN层上形成厚的钨层。 可以在钨层之上形成另外的金属层（例如铝）。