METHODS FOR UV-ASSISTED CONFORMAL FILM DEPOSITION
    6.
    发明申请
    METHODS FOR UV-ASSISTED CONFORMAL FILM DEPOSITION 有权
    紫外辅助合成膜沉积的方法

    公开(公告)号:US20140051262A9

    公开(公告)日:2014-02-20

    申请号:US13472282

    申请日:2012-05-15

    IPC分类号: H01L21/318

    摘要: Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.

    摘要翻译: 描述了在衬底上制备包括含碳和/或含氧膜如SiCN(也称为SiNC),SiON和SiONC膜的氮化硅(SiN)材料和其它含硅膜的方法。 根据各种实施方案,所述方法涉及一种或多种反应物的电磁辐射辅助活化。 在某些实施方案中,例如,该方法涉及蒸气相胺共反应物的紫外(UV)活化。 该方法可用于在低于约400℃的温度下沉积含硅膜,包括SiN和SiCN膜。

    METHODS FOR UV-ASSISTED CONFORMAL FILM DEPOSITION
    7.
    发明申请
    METHODS FOR UV-ASSISTED CONFORMAL FILM DEPOSITION 有权
    紫外辅助合成膜沉积的方法

    公开(公告)号:US20130196516A1

    公开(公告)日:2013-08-01

    申请号:US13472282

    申请日:2012-05-15

    IPC分类号: H01L21/318

    摘要: Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.

    摘要翻译: 描述了在衬底上制备包括含碳和/或含氧膜如SiCN(也称为SiNC),SiON和SiONC膜的氮化硅(SiN)材料和其它含硅膜的方法。 根据各种实施方案,所述方法涉及一种或多种反应物的电磁辐射辅助活化。 在某些实施方案中,例如,该方法涉及蒸气相胺共反应物的紫外(UV)活化。 该方法可用于在低于约400℃的温度下沉积含硅膜,包括SiN和SiCN膜。

    Methods of depositing highly selective transparent ashable hardmask films
    8.
    发明授权
    Methods of depositing highly selective transparent ashable hardmask films 有权
    沉积高选择性透明可腻硬掩模薄膜的方法

    公开(公告)号:US07981810B1

    公开(公告)日:2011-07-19

    申请号:US11449983

    申请日:2006-06-08

    IPC分类号: H01L21/31

    摘要: The present invention addresses this need by providing a method for forming transparent PECVD deposited ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers. Methods of the invention involve depositing the AHM using dilute hydrocarbon precursor gas flows and/or low process temperatures. The AHMs produced are transparent (having absorption coefficients of less than 0.1 in certain embodiments). The AHMs also have the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The lower temperature process also allows reduction of the overall thermal budget for a wafer.

    摘要翻译: 本发明通过提供一种用于形成对下层具有高等离子体蚀刻选择性的透明PECVD沉积可吸入硬掩模(AHM)的方法来满足这一需要。 本发明的方法包括使用稀烃前体气流和/或低工艺温度沉积AHM。 所生产的AHM是透明的(在某些实施方案中吸收系数小于0.1)。 AHM还具有硬掩模膜对下层的高选择性,成功地将薄膜整合的性质,并且适用于193nm生成和低于光刻方案的应用,其中硬掩模对下层的高选择性为 需要。 较低的温度过程还可以降低晶片的整体热预算。

    Methods of depositing stable and hermetic ashable hardmask films
    9.
    发明授权
    Methods of depositing stable and hermetic ashable hardmask films 有权
    沉积稳定和密封的可硬化硬掩膜的方法

    公开(公告)号:US07981777B1

    公开(公告)日:2011-07-19

    申请号:US11710377

    申请日:2007-02-22

    IPC分类号: H01L21/00

    摘要: The present invention provides PECVD methods for forming stable and hermetic ashable hard masks (AHMs). The methods involve depositing AHMs using dilute hydrocarbon precursor gas flows and/or high LFRF/HFRF ratios. In certain embodiments, the AHMs are transparent and have high etch selectivities. Single and dual layer hermetic AHM stacks are also provided. According to various embodiments, the dual layer stack includes an underlying AHM layer having tunable optical properties and a hermetic cap layer.

    摘要翻译: 本发明提供了用于形成稳定和密封的可嚼硬掩模(AHM)的PECVD方法。 这些方法涉及使用稀烃前体气体流和/或高LFRF / HFRF比来沉积AHM。 在某些实施方案中,AHM是透明的并且具有高蚀刻选择性。 还提供单层和双层密封AHM堆叠。 根据各种实施例,双层堆叠包括具有可调光学特性的底层AHM层和密封盖层。