发明申请
- 专利标题： Method Of Depositing Metals Using High Frequency Plasma
- 专利标题（中）： 使用高频等离子体沉积金属的方法
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申请号： US13742596申请日： 2013-01-16
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公开(公告)号： US20130196507A1公开(公告)日： 2013-08-01
- 发明人: Paul F. Ma , Guojun Liu , Annamalai Lakshmanan , Dien-Yeh Wu , Anantha K. Subramani
- 申请人： Paul F. Ma , Guojun Liu , Annamalai Lakshmanan , Dien-Yeh Wu , Anantha K. Subramani
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma.
公开/授权文献
- US09466524B2 Method of depositing metals using high frequency plasma 公开/授权日：2016-10-11
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