发明申请
- 专利标题： STRAINED CHANNEL FOR DEPLETED CHANNEL SEMICONDUCTOR DEVICES
- 专利标题（中）： 用于分离通道半导体器件的应变通道
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申请号： US13364850申请日： 2012-02-02
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公开(公告)号： US20130200459A1公开(公告)日： 2013-08-08
- 发明人: Thomas N. Adam , Kangguo Cheng , Ali Khakifirooz , Alexander Reznicek , Davood Shahrjerdi
- 申请人： Thomas N. Adam , Kangguo Cheng , Ali Khakifirooz , Alexander Reznicek , Davood Shahrjerdi
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A planar semiconductor device including a semiconductor on insulator (SOI) substrate with source and drain portions having a thickness of less than 10 nm that are separated by a multi-layered strained channel The multi-layer strained channel of the SOI layer includes a first layer with a first lattice dimension that is present on the buried dielectric layer of the SOI substrate, and a second layer of a second lattice dimension that is in direct contact with the first layer of the multi-layer strained channel portion. A functional gate structure is present on the multi-layer strained channel portion of the SOI substrate. The semiconductor device having the multi-layered channel may also be a finFET semiconductor device.
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