Invention Application
- Patent Title: Radiation Sensor
- Patent Title (中): 辐射传感器
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Application No.: US13756973Application Date: 2013-02-01
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Publication No.: US20130206989A1Publication Date: 2013-08-15
- Inventor: Huchuan ZHOU , Piotr KROPELNICKI , Julius Ming Lin TSAI
- Applicant: Agency for Science, Technology and Research
- Applicant Address: SG Singapore
- Assignee: Agency for Science, Technology and Research
- Current Assignee: Agency for Science, Technology and Research
- Current Assignee Address: SG Singapore
- Priority: SGSG201200738-1 20120201
- Main IPC: G01J5/02
- IPC: G01J5/02

Abstract:
A radiation sensor is provided. The radiation sensor includes a substrate; a diaphragm positioned over the substrate; an absorbing layer which is configured to absorb infrared radiation; a supporting element arranged between the absorbing layer and the diaphragm such that a spacing gap is formed between the absorbing layer and the diaphragm; wherein the size of the spacing gap is in a range of about 3.6 micrometer to about 100 micrometer.
Information query