发明申请
US20130207196A1 Cross-Coupled Transistor Circuit Defined on Four Gate Electrode Tracks
审中-公开
交叉耦合晶体管电路定义在四栅电极轨道上
- 专利标题: Cross-Coupled Transistor Circuit Defined on Four Gate Electrode Tracks
- 专利标题(中): 交叉耦合晶体管电路定义在四栅电极轨道上
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申请号: US13831636申请日: 2013-03-15
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公开(公告)号: US20130207196A1公开(公告)日: 2013-08-15
- 发明人: Scott T. Becker , Jim Mali , Carole Lambert
- 申请人: Scott T. Becker , Jim Mali , Carole Lambert
- 主分类号: H01L27/092
- IPC分类号: H01L27/092
摘要:
A first PMOS transistor is defined by a gate electrode extending along a first gate electrode track. A second PMOS transistor is defined by a gate electrode extending along a second gate electrode track. A first NMOS transistor is defined by a gate electrode extending along a third gate electrode track. A second NMOS transistor is defined by a gate electrode extending along a fourth gate electrode track. The gate electrodes of the first PMOS transistor and the first NMOS transistor are electrically connected to a first gate node. The gate electrodes of the second PMOS transistor and the second NMOS transistor are electrically connected to a second gate node. Each of the first PMOS transistor, the first NMOS transistor, the second PMOS transistor, and the second NMOS transistor has a respective diffusion terminal electrically connected to a common output node.
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